1. Characteristics of TiO2 metal-semiconductor-metal photodetectors with O2 plasma treatment
- Author
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J. K. Tsai, J. C. Lin, Y. P. Luo, S. J. Young, Teen-Hang Meen, T. C. Wu, S. J. Chang, B. Y. Lee, K. C. Lee, Liang-Wen Ji, and I. T. Tang
- Subjects
Photoluminescence ,Materials science ,business.industry ,Scanning electron microscope ,Photodetector ,Plasma ,Sputter deposition ,medicine.disease_cause ,chemistry.chemical_compound ,chemistry ,Titanium dioxide ,medicine ,Optoelectronics ,Radio frequency ,business ,Ultraviolet - Abstract
In this study, titanium dioxide (TiO 2 ) films were prepared on Corning glass substrates by radio frequency (RF) magnetron sputtering and treated without and with O 2 plasma conditions, and then were used to fabricate metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). The effects of the changes on TiO 2 films were investigated by using field-emission scanning electron microscope (FE-SEM), photoluminescence (PL) system and four-point probe measurement. With a 360-nm illumination and 5 V applied bias, it was found that the responsivities of the fabricated TiO 2 PDs without and with 2 minutes O 2 plasma treatment were 36 and 153 A/W, respectively.
- Published
- 2014
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