15 results on '"Arena C"'
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2. Towards a predictive model of electroporation-based therapies using pre-pulse electrical measurements
3. Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devices
4. Ge Deep Sub-Micron HiK/MG pFET with Superior Drive Compared to Si HiK/MG State-of-the-Art Reference
5. 0.35μm CMOS Technology with Chemical Mechanical Polishing for Three Metallization Levels Planarization.
6. Properties of LPCVD TiN Barrier Layers.
7. Comparison Between Different Intermetallic Dielectric Processes and Consequences on Field Transistor Behaviour.
8. 1μ MOS Devices with Self-Aligned Titanium Silicide CVD Tungsten as First Metallisation Level.
9. Ge Deep Sub-Micron HiK/MG pFET with Superior Drive Compared to Si HiK/MG State-of-the-Art Reference
10. Embedded SiGe S/D PMOS on thin body SOI substrate with drive current enhancement
11. Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devices
12. Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devices
13. Ge Deep Sub-Micron HiK/MG pFET with Superior Drive Compared to Si HiK/MG State-of-the-Art Reference
14. Ge Deep Sub-Micron HiK/MG pFET with Superior Drive Compared to Si HiK/MG State-of-the-Art Reference.
15. Field transistors electrical behaviour in double level aluminum interconnect processes.
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