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17 results on '"Almonacid, Florencia"'

9. GaAs Vertical-Tunnel-Junction Converter for Ultra-High Laser Power Transfer.

Author

Outes, Celia, Fernandez, Eduardo F., Seoane, Natalia, Almonacid, Florencia, and Garcia-Loureiro, Antonio J.

Subjects
HIGH power lasers, LASER power transmission, POLITICAL succession, GALLIUM arsenide, AUDITING standards, WIRELESS power transmission, SEMICONDUCTOR lasers, LASERS
Abstract

High power laser transmission is being intensively researched as a potential solution to transfer power to remote systems, being the power converter (PC) one of the main limiting factor to improve the system efficiency ($\eta $). Current PCs are mostly horizontal structures in which the $\eta $ heavily decreases at large input power. In this work, we propose a novel GaAs-based vertical-tunnel-junction (VTJ) PC suitable for ultra-high (UH) input power density (Pin). This structure does not suffer from $\eta $ degradation at high Pin because it is designed to have low current density, high output voltage and reduced series resistance (~ 2 orders of magnitude lower than the state-of-the-art PCs). We have demonstrated increasing $\eta $ with Pin, reaching values higher than 76% at 3000 $\text{W}\cdot $ cm−2. This vertical-based architecture enables a new set of potential applications for wireless PC to power remote systems with $\eta $ exceeding today’ s state-of-the-art PC designs. [ABSTRACT FROM AUTHOR]

Published
2021
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10. Vertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns)

Author

Universidade de Santiago de Compostela. Centro de Investigación en Tecnoloxías da Información, Universidade de Santiago de Compostela. Departamento de Electrónica e Computación, Fernández, Eduardo F., Seoane Iglesias, Natalia, Almonacid, Florencia, García Loureiro, Antonio Jesús, Universidade de Santiago de Compostela. Centro de Investigación en Tecnoloxías da Información, Universidade de Santiago de Compostela. Departamento de Electrónica e Computación, Fernández, Eduardo F., Seoane Iglesias, Natalia, Almonacid, Florencia, and García Loureiro, Antonio Jesús

Abstract

A novel architecture of cell structure tailored to ultra-high (>2000 suns) concentration ratios is proposed. The basic solar cell consists of two p-n junctions connected in series by a highly doped tunnel diode with the metallic contacts located laterally. The tunneling connection allows using direct band-gap semiconductor compounds aiming to optimize the absorption of the spectrum. The performance of the novel architecture is investigated up to ultra-high concentration using TCAD software. Simulations show its viability for developing a new generation of solar cells to increase the potential in terms of efficiency and cost reduction of ultra-high concentrator systems. The solar cell does not show any degradation with concentration and efficiency as high as 28.4% at 15000 suns has been obtained for a preliminary design

Published
2019

14. A unified global investigation on the spectral effects of soiling losses of PV glass substrates: preliminary results

Author

Micheli, Leonardo, primary, Fernandez, Eduardo F., additional, Smestad, Greg P., additional, Alrashidi, Hameed, additional, Sarmah, Nabin, additional, Sellami, Nazmi, additional, Hassan, Ibrahim A. I., additional, Kasry, Amal, additional, Nofuentes, Gustavo, additional, Sood, Neeru, additional, Pesala, Bala, additional, Senthilarasu, S., additional, Almonacid, Florencia, additional, Reddy, K.S., additional, Muller, Matthew, additional, and Mallick, Tapas K., additional

Published
2017
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16. Vertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns).

Author

Fernandez, Eduardo F., Seoane, Natalia, Almonacid, Florencia, and Garcia-Loureiro, Antonio J.

Subjects
TUNNEL junctions (Materials science), SOLAR cells, BAND gaps
Abstract

A novel architecture of cell structure tailored to ultra-high (>2000 suns) concentration ratios is proposed. The basic solar cell consists of two p-n junctions connected in series by a highly doped tunnel diode with the metallic contacts located laterally. The tunneling connection allows using direct band-gap semiconductor compounds aiming to optimize the absorption of the spectrum. The performance of the novel architecture is investigated up to ultra-high concentration using TCAD software. Simulations show its viability for developing a new generation of solar cells to increase the potential in terms of efficiency and cost reduction of ultra-high concentrator systems. The solar cell does not show any degradation with concentration and efficiency as high as 28.4% at 15000 suns has been obtained for a preliminary design. [ABSTRACT FROM AUTHOR]

Published
2019
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