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This letter reports for the first time the interesting behavior of the interface between indium tin oxide (ITO) as a high resistive electrode and barium strontium titanate tunable paraelectric thin film material. The interface is consisting of barium strontium titanate (BST) thin film dielectric material sandwiched between two ITO high resistive layers, all are integrated above glass substrate. When dc field is applied between the ITO layers, the BST thin film material properties are tuned. It is found that the ITO/BST/ITO heterostructure exhibits a tunable resistor performance. To our knowledge; these results are never reported. [ABSTRACT FROM PUBLISHER]

This letter reports low-field wide-tunable interdigitated barium strontium titanate (BST) capacitors. The capacitors consisting of BST thin film dielectric, silicon substrate, and gold metallization have been fabricated. The capacitance exhibits 0.2 pF at zero-bias and shows a tunability of 63% with an applied electric field of 1.4 V/mum. This corresponds to a 3.5 mum electrode gap width and a 5 V dc bias. Microwave measurements reveal a zero bias film quality of 50 around 30 GHz. [ABSTRACT FROM PUBLISHER]