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In the work, the comparison of sensitivities of optical plasmon sensors constructed on the basis of semiconductor nanoparticles of various shapes is presented. The calculation was made within the framework of the dipole approximation. A characteristic of sensitivity is the value of the shift of the plasmon resonance maximum per unit change in the refractive index of a medium. The influence of the material of a nanoparticle and its shape on the sensitivity of an optical plasmon sensor is shown.

In the work, the physico-mathematical model of an optical plasmon sensor constructed on the basis of semiconductor ellipsoidal nanoparticles is proposed. It is shown that the sensitivity of such a sensor is proportional to the value of the ellipsoid semiaxis along which polarization of acting radiation is directed.

The paper presents the general scheme of operation and the physico-mathematical model of an optical plasmon sensor based on indium-tin oxide (ITO) nanoparticles. The principle of operation of the "ITONPsensor" program intended for simulation of a response of the optical plasmon sensor to a change in parameters of a medium being measured is also described. The program was developed on the basis of the physico-mathematical model of absorption of radiation by semiconductor ITO nanoparticles.

The thickness of aluminum oxide thin films fabricated by technology of atomic layer deposition with different number of cycles measured by small angle X-ray scattering. The dependence of the film thickness in the range of 20–120 nm from the number of ALD process cycles is linear.