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1. Special Section on the 75th Anniversary of the IEEE Circuits and Systems Society.

Author

Li, Yongfu, Rokhani, Fakhrul Zaman, Lee, Hanho, Tang, Kea-Tiong, Chen, Jie, Ismail, Mohd Hafiz, Uwate, Yoko, Brackin, Molly, Amara, Amara, and Sunwoo, Myung Hoon

Abstract

The IEEE Circuits and Systems (CAS) Society celebrates its 75th anniversary in 2024, showcasing its evolution from a Circuit Theory Group to a leading global technological force. This year, the Society introduces a commemorative logo that encapsulates its innovative spirit and a Promotion Toolkit to amplify the celebratory atmosphere across all chapters. The 75th CAS Society’s Global Celebration is set to engage members worldwide, with a virtual event on May 21st, 2024, featuring photo and video contests highlighting member creativity and experiences. The pinnacle of the celebration was at IEEE ISCAS 2024, where the 2nd Edition of “A Short History of Circuits and Systems” was launched, and contributions were recognized during the IEEE CAS Society Award ceremony. The Society, with 15,236 members and a strong global presence, continues to foster innovation and collaboration through its conferences, publications, and community programs, reflecting its commitment to advancing technology for the betterment of humanity. [ABSTRACT FROM AUTHOR]

Published
2024
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2. Physically Unclonable Function Using GSHE Driven SOT Assisted p-MTJ for Next Generation Hardware Security Applications

Author

Divyanshu Divyanshu, Rajat Kumar, Danial Khan, Selma Amara, and Yehia Massoud

Subjects
Giant spin hall effect, hardware security, magnetic tunnel junction, physical unclonable functions, spintronic, spin-orbit torque, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

The increasing threat of security attacks on hardware security applications has driven research towards exploring beyond CMOS devices as an alternative. Spintronic devices offer advantages like low power, non-volatility, inherent spatial and temporal randomness, simplicity of integration with a silicon substrate, etc., making them a potential candidate for next-generation hardware security systems. In this work, we explore the Giant Spin Hall effect driven spin-orbit torque magnetic tunnel junction implementing physically unclonable function. The effect of process variation is considered in key MTJ parameters like TMR ratio, free and oxide layer thickness following Gaussian distribution, and Monte-Carlo simulations to determine the effect of the process variations. A unique challenge-response pair is obtained utilizing the inherent variations in magnetization dynamics of the free layer due to process variations.

Published
2022
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3. Logic Locking Using Emerging 2T/3T Magnetic Tunnel Junctions for Hardware Security

Author

Divyanshu Divyanshu, Rajat Kumar, Danial Khan, Selma Amara, and Yehia Massoud

Subjects
CMOS technology, hardware security, logic locking, magnetic tunnel junction (MTJ), spintronics, spin-orbit torque (SOT), Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

With the advancement of beyond CMOS devices, a new approach to utilize the inherent physics of such emerging structures for various applications is of great interest in recent research. Spintronics-based devices offer key advantages like ease of fabrication with Si-substrate, non-volatile memory, low operational voltage, and non-linear device characteristics, which have shown potential for several emerging fields of study. Hardware security is one of the key interest areas which heavily relies on CMOS-based ICs, and the defense and attack mechanism is mostly based on CMOS-based structures. This work explores several emerging structures based on 2T/3T magnetic tunnel junctions (MTJ) for possible logic locking applications in hardware security systems. We demonstrate the effect of MTJ-based devices to implement logic locking even in the presence of process variations, and its ability of robustness to device imperfections has been evaluated using monte carlo simulations for practical applications.

Published
2022
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6. Past, Present, and Future of CASS Educational Programs and Initiatives [Feature].

Author

Rokhani, Fakhrul Zaman, Zhang, Xinmiao, Joshi, Rajiv V., Reis, Ricardo, Grimblatt, Victor, Tang, Kea-Tiong, Li, Yongfu, Amara, Amara, and Delgado-Restituto, Manuel

Abstract

The Circuits and Systems Society (CASS) places a strong emphasis on advancing education within its domain. Various educational programs and resources have contributed to the professional development of CASS members for more than 20 years now. A major transformation within the Society was started in 2021 with a clear vision to become a premier educational resource within circuits and systems areas of interest. This article provides a comprehensive review of flagship educational programs and past initiatives. Insights from the lessons learned and future trends in the education ecosystem guided society’s strategies and frameworks for improving and developing new educational products and services. The benefits of learning with the CASS program are presented, highlighting the Society’s deep commitment to serving the community at large in educational pursuit for years to come. [ABSTRACT FROM AUTHOR]

Published
2024
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42. Voltage-Controlled Domain Wall Motion-Based Neuron and Stochastic Magnetic Tunnel Junction Synapse for Neuromorphic Computing Applications

Author

Aijaz H. Lone, S. Amara, and H. Fariborzi

Subjects
TK7885-7895, magnetic tunnel junction (MTJ), Computer engineering. Computer hardware, Quantitative Biology::Neurons and Cognition, Hardware and Architecture, pattern recognition, Domain wall motion (DWM), Electrical and Electronic Engineering, thermal effects, neuromorphic computing, spin orbit torque, Electronic, Optical and Magnetic Materials
Abstract

This work discusses the proposal of a spintronic neuromorphic system with spin orbit torque-driven domain wall motion (DWM)-based neurons and synapses. We propose a voltage-controlled magnetic anisotropy DWM-based magnetic tunnel junction (MTJ) neuron. We investigate how the electric field at the gate (pinning site), generated by the voltage signals from pre-neurons, modulates the DWM, which reflects in the nonlinear switching behavior of neuron magnetization. For the implementation of synaptic weights, we propose a 3-terminal MTJ with stochastic DWM in the free layer. We incorporate intrinsic pinning effects by creating triangular notches on the sides of the free layer. The pinning of the domain wall and intrinsic thermal noise of the device lead to the stochastic behavior of DWM. The control of this stochasticity by the spin orbit torque is shown to realize the potentiation and depression of the synaptic weight. The micromagnetics and spin transport studies in synapses and neurons are carried out by developing a coupled micromagnetic non-equilibrium Green’s function (MuMag-NEGF) model. The minimization of the writing current pulsewidth by leveraging the thermal noise and demagnetization energy is also presented. Finally, we discuss the implementation of digit recognition by the proposed system using a spike time-dependent algorithm.

Published
2022

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