101. Differential Evolution Algorithm With Asymmetric Coding for Solving the Reliability Problem of 3D-TLC CT Flash-Memory Storage Systems.
- Author
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Yu, David Kuang-Hui and Hsieh, Jen-Wei
- Subjects
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DIFFERENTIAL evolution , *FLASH memory , *ALGORITHMS , *BIT error rate , *PROBLEM solving , *DATA warehousing - Abstract
In recent years, NAND flash memory has been widely used in mobile devices, laptops, desktops, and data center storage systems due to its low-power consumption, high performance, high density, lightweight, shock resistance, and high-reliability natures. However, as the stacked layers and the storage density increase, flash memory also suffers from a higher raw bit error rate (RBER) and shorter lifetime. Observing that reliable cell states suffer from less data retention errors and program disturbance, we propose a differential evolution coding scheme to increase the probability of storing data in more reliable cell states, thereby reducing the RBER. We conducted the experiments over a development platform of SSD storage device with 3D-TLC charge trap (CT) NAND flash memory. The experimental results showed that the proposed differential evolution algorithm with asymmetric coding scheme could averagely reduce RBER by 48.88%, 65.45%, 52.61%, 61.99%, 80.19%, and 33.18% compared with baseline, asymmetric coding algorithm, asymmetric coding scheme with stripe-pattern elimination algorithm, UAC- $n$ LC, word-line batch score modulation programming, and SCB schemes. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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