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In this paper, we demonstrate high-performance giant magnetoresistive spin transistor (GMRST) and magnetotunneling resistive spin transistor (MTRST) which could be used as magnetic pickup head and magnetoresistive random access memory (MRAM). This kind of spin device is based on the technologies of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects together with a p-n junction. The junction is used as a potential barrier to select spin electrons. In case of GMRST the collector current, Ic, varies from 464 pA at magnetically parallel state to 309 pA at magnetically antiparallel state and gives a percentage change of about 50% at room temperature. As for the MTRST, the change of Ic is about 45% at room temperature with current varying from 2.9 to 4.2 μA. Memory effect, which is the intrinsic behavior of magnetic materials, is also demonstrated. [ABSTRACT FROM AUTHOR]

The effects of low-temperature (210 °C-290 °C) annealing on the microstructure, lattice constant, and magnetic properties of (In0.52Al0.48)0.91Mn0.09As grown by low-temperature molecular-beam epitaxy were studied. The results show that low-temperature annealing has little influence on the crystalline structure and interface quality of (In0.52Al0.48)0.91Mn0.09As epilayer. In contrast, both the lattice constant and Curie temperature of (In0.52Al0.48)0.91Mn0.09As are found to be strongly dependent on the annealing temperature. The lattice constant linearly decreases with increasing annealing temperature; while the Curie temperature increases with increasing annealing temperature up to 250 °C, and then abruptly decreases upon further annealed at 270 °C and 290 °C. [ABSTRACT FROM AUTHOR]