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Start Over Topic power, energy and industry applications Topic materials science Publisher ieee
2 results

1. Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter

Author

Alexander Anthon, Zhe Zhang, and Michael A. E. Andersen

Subjects
Silicon, Power, Energy and Industry Applications, Materials science, Efficiency, Silicon carbide, Inductor, MOSFET, chemistry.chemical_compound, SiC MOSFET, JFETs, business.industry, Boost converter, Electrical engineering, JFET, Logic gates, Insulated-gate bipolar transistor, Insulated gate bipolar transistors, chemistry, Logic gate, Si IGBT, SiC JFET, business, Switches, Voltage
Abstract

This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost converter. Using SiC switching devices, switching energies can be reduced by almost 70% and the forward voltages of such devices are much lower compared to the IGBT which then reduce the conduction losses. This reduction in semiconductor losses can increase overall converter efficiencies up to 0.4% at 20kHz or enable high frequency operation up to 100 kHz which then reduces the size and weight of the inductor by more than 75% while still achieving efficiencies over 98.3 %.

Published
2015

2. Modeling, fabrication and high power optical characterization of plasmonic waveguides

Author

Oleg Lysenko and Andrei V. Lavrinenko

Subjects
optical characterization, film thickness, Power, Energy and Industry Applications, thin gold films, Optical fiber, metallic thin films, Nanophotonics, Physics::Optics, Optical device fabrication, optical fabrication, optical waveguides, AuSiO2(role ss), law.invention, law, optical losses, Polariton, nanostructured materials, Si(role sur), linear propagation, silicon dioxide, SiO2(role sur), surface plasmon polaritons, Surface plasmon, Components, Circuits, Devices and Systems, O2(role ss), Surface waves, Engineered Materials, Dielectrics and Plasmas, Wavelength, SiO2(role ss), effective index method, nanophotonics, Optoelectronics, silicon compounds, Fields, Waves and Electromagnetics, propagation losses, wavelength 7.5E-07 1.7E-06 m, polaritons, Materials science, Fabrication, Au(role ss), Au(role sur), Bioengineering, plasmonics, Optics, O(role sur), Optical fibers, quality inspection, Si(role ss), high-power laser, Plasmon, AuSiO2(role sur), coupling losses, business.industry, surface plasmons, plasmonic waveguides, gold, wavelength 750 nm to 1700 nm, Surface plasmon polariton, Optical surface waves, propagation vector, Signal Processing and Analysis, Au-SiO2, O(role ss), business, plasmons, O2(role sur)
Abstract

This paper describes modeling, fabrication and high power optical characterization of thin gold films embedded in silicon dioxide. The propagation vector of surface plasmon polaritons has been calculated by the effective index method for the wavelength range of 750-1700 nm and film thickness of 15, 30 and 45 nm. The fabrication process of such plasmonic waveguides with width in the range of 1-100 μm and their quality inspection are described. The results of optical characterization of plasmonic waveguides using a high power laser with the peak power wavelength 1064 nm show significant deviation from the linear propagation regime of surface plasmon polaritons at the average input power of 100 mW and above. Possible reasons for this deviation are heating of the waveguides and subsequent changes in the coupling and propagation losses.

Published
2015