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The conventional chip-on-board light-emitting diodes (COB-LEDs) with flat encapsulant layer present low light efficiency due to the total internal reflection (TIR) happens at the encapsulant-air interface. In this study, microlens array was realized on the flat encapsulant layer of COB-LEDs to diminish the TIR at the encapsulant-air interface. The microlens array was fabricated by selectively exposing the UV glue film in UV-light through a pre-designed photomask. Micro-pillars form after the UV-light exposure and microlens array forms spontaneously due to the wetting process of uncured UV glue on the micro-pillars. The geometry of the microlens array was experimentally optimized, and the light efficiency enhancement of COB-LEDs by the microlens array was analyzed. The results show that optimal geometry of microlens array with curvature of ~41° and base diameter of $\sim 87~\mu \text{m}$ can be realized by adjusting the UV-light exposure time as >40 s and UV glue film thickness as $> 80~\mu \text{m}$. Compared to the traditional flat encapsulant layer, the microlens array with optimal geometry increases the light efficiency of blue and ~5000 K white COB-LEDs by 50.9% and 9.31%. [ABSTRACT FROM AUTHOR]

The chip-on-board light-emitting diodes (COB-LEDs) present low light efficiency due to the total internal reflection (TIR) at the flat encapsulant–air interface. In this study, a simple method based on complementary printing was proposed to realize the millilens array on the flat encapsulant layer to diminish the TIR effect, and thereby improve the light efficiency of the COB-LEDs. Experiments and optical simulation based on the Monte Carlo ray-tracing method were conducted to investigate the effect of the lens curvature θ, lens radius R, and lens spacing D on the light efficiency of the COB-LEDs. The results show that the light efficiency of the COB-LEDs increases with R and decreases with D, and COB-LEDs with hemispherical lens arrays (θ = 90°) have the highest light efficiency when R and D are fixed. Compared with the conventional COB-LEDs with a flat encapsulant, closely arranged hemispherical lens arrays with an R of 0.5, 1, and 1.5 mm enhance the light efficiency of the blue COB-LEDs by 87.56%, 90.62%, and 95.73% and enhance the light efficiency of ~6000-K white COB-LEDs by 17.24%, 18.86%, and 20.33%, respectively. [ABSTRACT FROM AUTHOR]

In conventional quantum dot light-emitting diodes (QLEDs), the organic charge transport materials are susceptible to erosion by water and oxygen, which would reduce the efficiency and lifetime of the devices. Herein, we modified the surface of the organic hole transport layer with an ultra-thin Al2O3 layer, which is deposited by using atomic layer deposition technique, to obtain the highly efficient and stable QLEDs. It is indicated that the ultra-thin Al2O3 interlayer plays a significant role in decreasing leakage current, suppressing exciton quenching and passivating the defects. The device with Al2O3 interface modification exhibits the maximum external quantum efficiency (EQE) of 20.8%, current efficiency (CE) of 21.6 cd A−1, and lifetime of 482000 h. In comparison with the control device, the EQE, CE and lifetime are improved by 31%, 32%, and 330%, respectively. The results indicate that the strategy of Al2O3 interface modification could provide an effective way for realizing highly efficiency QLED with long lifetime. [ABSTRACT FROM AUTHOR]