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We prepared giant magnetoresistance samples comprising of pseudo spin valve structures and measured the current-perpendicular-to-plane magnetoresistance (MR) with applied magnetic field along the easy and hard axes of the samples. When the magnetic field was applied along the easy axis, high and low resistance states representing magnetization parallel and anti-parallel states were observed. However, when the magnetic field was applied along the hard axis, two stochastic MR curves were obtained. The two distinct MR curves correspond to the different magnetizations reversal processes via two kinds of the magnetization orientation states, fully parallel and anti-parallel, at remanence. In our case, the two distinct magnetization reversal processes occurred randomly. [ABSTRACT FROM AUTHOR]

In this paper, we demonstrate high-performance giant magnetoresistive spin transistor (GMRST) and magnetotunneling resistive spin transistor (MTRST) which could be used as magnetic pickup head and magnetoresistive random access memory (MRAM). This kind of spin device is based on the technologies of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects together with a p-n junction. The junction is used as a potential barrier to select spin electrons. In case of GMRST the collector current, Ic, varies from 464 pA at magnetically parallel state to 309 pA at magnetically antiparallel state and gives a percentage change of about 50% at room temperature. As for the MTRST, the change of Ic is about 45% at room temperature with current varying from 2.9 to 4.2 μA. Memory effect, which is the intrinsic behavior of magnetic materials, is also demonstrated. [ABSTRACT FROM AUTHOR]