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Start Over Topic components, circuits, devices and systems Topic fields, waves and electromagnetics Publisher ieee
3 results

1. Flicker noise comparison of direct conversion mixers using Schottky and HBT dioderings in SiGe:C BiCMOS technology

Author

Rasmus S. Michaelsen, Michele Squartecchia, Kjeld M. Tamborg, and Tom K. Johansen

Subjects
Engineering, diode connected HBT, Electronic mixer, flicker (1/f) noise, Loss measurement, Noise measurement, Schottky diodes, Noise (electronics), Mixers, Frequency measurement, Schottky diode, Flicker noise, Mixer, Monolithic microwave integrated circuit, Diode, business.industry, Components, Circuits, Devices and Systems, Cutoff frequency, General Topics for Engineers, MMIC, Optoelectronics, business, Fields, Waves and Electromagnetics, Heterojunction bipolar transistors
Abstract

In this paper, we present flicker noise measurements of two X-band direct conversion mixers implemented in a SiGe:C BiCMOS technology. Both mixers use a ring structure with either Schottky diodes or diode-connected HBTs for double balanced operation. The mixers are packaged in a metal casing on an Arlon 25N substrate to shield the sensitive noise measurement. Conversion loss measurements of both mixers is performed both for on-wafer and packaged versions. The experimental results shows that the Schottky diode mixer exhibits a 1/f noise corner frequency of 250 kHz, while the diode connected HBT circuit demonstrates a 1/f noise corner frequency around 10 kHz.

Published
2015

2. Modeling, fabrication and high power optical characterization of plasmonic waveguides

Author

Oleg Lysenko and Andrei V. Lavrinenko

Subjects
optical characterization, film thickness, Power, Energy and Industry Applications, thin gold films, Optical fiber, metallic thin films, Nanophotonics, Physics::Optics, Optical device fabrication, optical fabrication, optical waveguides, AuSiO2(role ss), law.invention, law, optical losses, Polariton, nanostructured materials, Si(role sur), linear propagation, silicon dioxide, SiO2(role sur), surface plasmon polaritons, Surface plasmon, Components, Circuits, Devices and Systems, O2(role ss), Surface waves, Engineered Materials, Dielectrics and Plasmas, Wavelength, SiO2(role ss), effective index method, nanophotonics, Optoelectronics, silicon compounds, Fields, Waves and Electromagnetics, propagation losses, wavelength 7.5E-07 1.7E-06 m, polaritons, Materials science, Fabrication, Au(role ss), Au(role sur), Bioengineering, plasmonics, Optics, O(role sur), Optical fibers, quality inspection, Si(role ss), high-power laser, Plasmon, AuSiO2(role sur), coupling losses, business.industry, surface plasmons, plasmonic waveguides, gold, wavelength 750 nm to 1700 nm, Surface plasmon polariton, Optical surface waves, propagation vector, Signal Processing and Analysis, Au-SiO2, O(role ss), business, plasmons, O2(role sur)
Abstract

This paper describes modeling, fabrication and high power optical characterization of thin gold films embedded in silicon dioxide. The propagation vector of surface plasmon polaritons has been calculated by the effective index method for the wavelength range of 750-1700 nm and film thickness of 15, 30 and 45 nm. The fabrication process of such plasmonic waveguides with width in the range of 1-100 μm and their quality inspection are described. The results of optical characterization of plasmonic waveguides using a high power laser with the peak power wavelength 1064 nm show significant deviation from the linear propagation regime of surface plasmon polaritons at the average input power of 100 mW and above. Possible reasons for this deviation are heating of the waveguides and subsequent changes in the coupling and propagation losses.

Published
2015

3. Analysis and design of complex impedance transforming marchand baluns

Author

Rasmus S. Michaelsen, Tom K. Johansen, and Kjeld M. Tamborg

Subjects
Engineering, Reactance, Impedance matching, Phase (waves), Capacitors, law.invention, Mathematical model, Balun, law, Microwave theory and techniques, Insertion loss, Electrical impedance, Monolithic microwave integrated circuit, Aerospace, Ports (Computers), Photonics and Electrooptics, business.industry, Electrical engineering, Impedance, Components, Circuits, Devices and Systems, Communication, Networking and Broadcast Technologies, Complex impedance transformation, Capacitor, Signal Processing and Analysis, Integrated circuit modeling, MMIC, business, Fields, Waves and Electromagnetics, Marchand balun
Abstract

A new type of Marchand balun is presented in this paper, which has the property of complex impedance transformation. To allow the Marchand balun to transform between arbitrary complex impedances, three reactances should be added to the circuit. A detailed analysis of the circuit gives the governing equations. To verify the theory, a design and electromagnetic simulation of a lumped element Marchand balun is made in a SiGe BiCMOS technology. The lumped element impementation is favorable because capacitors are placed where the additional reactances should be added. Thus it is possible to absorb a positive reactance by reducing a capacitor. At the design frequency of 10.5 GHz it matches 50Ω to 50 - j66Ω. It has an insertion loss of 5.1 dB, an input reflection of −20.8 dB, as well as phase and magnitude imbalance better than 0.2° and 0.12 dB, respectively.

Published
2014