1. The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process.
- Author
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Jun-Seok Ha, Lee, S.W., Hyun-Jae Lee, Lee Hyo-Jong, Lee, S.H., Goto, H., Kato, T., Fujii, K., Cho, M.W., and Yao, T.
- Abstract
Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vertical LED by chemical lift-off showed very good current-voltage performance with low series resistance of 0.65 Omega and low operated voltage of 3.11 V at 350 mA. Also, this device could be operated at a much higher injection forward current (1118 mA at 3.70 V) by thermally conductive metal substrate which enabled the high current operation with excellent heat dissipation. [ABSTRACT FROM PUBLISHER]
- Published
- 2008
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