1. CMOS Compatible, Low Temperature, growth of Silicon Nanowires by Microwave nano-susceptors
- Author
-
Pietro Riello, Elti Cattaruzza, Rosario Rao, and Fabrizio Palma
- Subjects
Materials Chemistry2506 Metals and Alloys ,Materials science ,Silicon ,Nanowire ,chemistry.chemical_element ,Bioengineering ,Hardware_PERFORMANCEANDRELIABILITY ,02 engineering and technology ,Integrated circuit ,01 natural sciences ,Temperature measurement ,law.invention ,law ,0103 physical sciences ,Nano ,Hardware_INTEGRATEDCIRCUITS ,Electrical and Electronic Engineering ,Condensed Matter Physics ,010302 applied physics ,business.industry ,Settore FIS/01 - Fisica Sperimentale ,CMOS ,silicon ,021001 nanoscience & nanotechnology ,nanowires ,chemistry ,Optoelectronics ,Field-effect transistor ,0210 nano-technology ,business ,Microwave ,Hardware_LOGICDESIGN - Abstract
Silicon nanowires grown by the VLS mechanism resulted as efficient chemical and biological sensors as field effect transistors, nevertheless up to date a key point is the integration of the nanostructure in actual integrated circuit. The basic requirement appears the possibility to perform the deposition at low temperature, directly on the backside of the already finished integrated circuit. This would combine the high chemical sensitivity of the nanowires with the sensitivity, the elaboration capability, and the low production cost of CMOS technology. This paper presents a new technique which allows the grow of silicon nanowires at temperature lower than 200°C. MW CVD technique is used combined with nano-susceptors.
- Published
- 2018