1. Simulation of Quantum-Dot Structures in Si/SiO2
- Author
-
Wolfgang Porod and Minhan Chen
- Subjects
Physics ,Surface (mathematics) ,simulation and modeling ,Condensed matter physics ,Charge model ,Oxide ,Material system ,silicon/silicon dioxide ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Computer Graphics and Computer-Aided Design ,lcsh:QA75.5-76.95 ,Silicon quantum dots ,chemistry.chemical_compound ,chemistry ,Hardware and Architecture ,Quantum dot ,Quantum mechanics ,Special care ,Boundary value problem ,lcsh:Electronic computers. Computer science ,Electrical and Electronic Engineering ,Poisson's equation ,finite element method - Abstract
We present numerical simulations for the design of gated few-electron quantum dot structures in the Si/SiO2 material system. Because of the vicinity of the quantum dots to the exposed surface, we take special care in treating the boundary conditions at the oxide/vacuum interfaces. In our simulations, the confining potential is obtained from the Poisson equation with a Thomas-Fermi charge model. We find that the dot occupancy can be effectively controlled in the few-electron regime.
- Published
- 1998
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