1. Current fluctuation of electron and hole carriers in multilayer WSe 2 field effect transistors
- Author
-
Ho Kyun Jang, Jong Mok Shin, Gyu-Tae Kim, Seung Pil Ko, Jun Eon Jin, Yong Jin Kim, Young-geun Kim, Minju Shin, School of Electrical Engineering [Korea University], Korea University [Seoul], Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Electron mobility ,Materials science ,Physics and Astronomy (miscellaneous) ,Condensed matter physics ,Field-effect transistor ,Charge carrier ,Work function ,Electric potential ,Current (fluid) ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Noise (electronics) ,Threshold voltage - Abstract
International audience; Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe2 field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe2 FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (SI) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NSI) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.
- Published
- 2015
- Full Text
- View/download PDF