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4 results on '"Mohamed Boukhicha"'

1. RF compressibility of topological surface and interface states in metal–hBN–Bi 2 Se 3 capacitors

Author

Kenji Watanabe, José Palomo, T. Taniguchi, Gwendal Fève, T Wilde, Bernard Plaçais, J. Duffy, Jean-Marc Berroir, A. Inhofer, Erwann Bocquillon, Mohamed Boukhicha, Badih A. Assaf, Laboratoire de physique de l'ENS - ENS Paris (LPENS (UMR_8023)), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Université Paris Diderot - Paris 7 (UPD7), Northeastern University [Boston], Brookhaven National Laboratory [Upton, NY] (BNL), U.S. Department of Energy [Washington] (DOE)-UT-Battelle, LLC-Stony Brook University [SUNY] (SBU), State University of New York (SUNY)-State University of New York (SUNY), National Institute for Materials Science (NIMS), Physique Mésoscopique, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Université Paris Diderot - Paris 7 (UPD7)-École normale supérieure - Paris (ENS Paris), University of Notre Dame [Indiana] (UND), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Brookhaven National Laboratory [Upton] (BNL), Stony Brook University [SUNY] (SBU), and Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS)

Subjects
Surface (mathematics), Materials science, Interface (Java), FOS: Physical sciences, 02 engineering and technology, 01 natural sciences, law.invention, Metal, Quantum capacitance, symbols.namesake, law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, General Materials Science, 010306 general physics, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Materials Science (cond-mat.mtrl-sci), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Capacitor, Dirac fermion, Topological insulator, visual_art, Compressibility, visual_art.visual_art_medium, symbols, 0210 nano-technology
Abstract

The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF admittance of the capacitors versus gate voltage, we extract the compressibility of the Dirac state located at a gated TI surface. We show that even in the presence of an ungated surface that hosts a trivial electron accumulation layer, the other gated surface always exhibits an ambipolar effect in the quantum capacitance. We succeed in determining the velocity of surface Dirac fermions in two devices, one with a passivated surface and the other with a free surface that hosts trivial states. Our results demonstrate the potential of RF quantum capacitance techniques to probe surface states of systems in the presence of a parasitic density-of-states., Comment: J. Phys.: Mater. Focus on Topological Matter

Published
2019
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2. Low frequency Raman spectroscopy of few-atomic-layer thick hBN crystals

Author

Bernard Plaçais, Léonard Schué, I. Stenger, Mohamed Boukhicha, Bruno Berini, Julien Barjon, Annick Loiseau, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'étude des microstructures [Châtillon] (LEM - ONERA - CNRS), Centre National de la Recherche Scientifique (CNRS)-ONERA, Laboratoire Pierre Aigrain (LPA), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), ANR-14-CE08-0018,GoBN,Hétérostructures de graphènes blanc et noir(2014), European Project: 696656,H2020,H2020-Adhoc-2014-20,GrapheneCore1(2016), Université Paris Saclay (COmUE)-ONERA-Centre National de la Recherche Scientifique (CNRS), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), ONERA-Centre National de la Recherche Scientifique (CNRS), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS-PSL), ONERA-Centre National de la Recherche Scientifique (CNRS)-Université Paris Saclay (COmUE), ONERA - The French Aerospace Lab [Châtillon], and Université Paris Saclay (COmUE)-ONERA

Subjects
Materials science, FOS: Physical sciences, Nanotechnology, 02 engineering and technology, Nitride, 01 natural sciences, law.invention, symbols.namesake, law, 0103 physical sciences, General Materials Science, Thin film, 010306 general physics, Spectroscopy, ComputingMilieux_MISCELLANEOUS, Condensed Matter - Materials Science, Thin layers, Graphene, business.industry, Mechanical Engineering, Materials Science (cond-mat.mtrl-sci), General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Mechanics of Materials, symbols, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, van der Waals force, 0210 nano-technology, business, Raman spectroscopy, Raman scattering
Abstract

Hexagonal boron nitride (hBN) has recently gained a strong interest as a strategic component in engineering van der Waals heterostructures built with two dimensional crystals such as graphene. This work reports micro-Raman measurements on hBN flakes made of a few atomic layers, prepared by mechanical exfoliation. The temperature dependence of the Raman scattering in hBN is investigated first such as to define appropriate measurements conditions suitable for thin layers avoiding undesirable heating induced effects. We further focus on the low frequency Raman mode corresponding to the rigid shearing oscillation between adjacent layers, found to be equal to 52.5 cm-1 in bulk hBN. For hBN sheets with thicknesses below typically 4 nm, the frequency of this mode presents discrete values, which are found to decrease down to 46.0(5) cm-1 for a three-layer hBN, in good agreement with the linear-chain model. This makes Raman spectroscopy a relevant tool to quantitatively determine the number of layers in ultra thin hBN sheets, below 8L.

Published
2017
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3. High quality 2D crystals made by anodic bonding: a general technique for layered materials

Author

Karim Gacem, Abhay Shukla, Mohamed Boukhicha, Zhesheng Chen, Institut de minéralogie et de physique des milieux condensés (IMPMC), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Institut de Physique du Globe de Paris (IPG Paris)-Centre National de la Recherche Scientifique (CNRS), and Université Pierre et Marie Curie - Paris 6 (UPMC)-IPG PARIS-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Fabrication, Materials science, Optical contrast, Bioengineering, Nanotechnology, 02 engineering and technology, Substrate (electronics), 010402 general chemistry, FILMS, 01 natural sciences, Scotch tape, law.invention, Quality (physics), [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], law, LIQUID EXFOLIATION, General Materials Science, Electrical and Electronic Engineering, MOS2, Graphene, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, NANOSHEETS, EVOLUTION, 0104 chemical sciences, LARGE-AREA, GRAPHENE ELECTRONICS, Mechanics of Materials, Anodic bonding, 0210 nano-technology
Abstract

International audience; Anodic bonding of nanolayers is an easy technique based on a simple apparatus, which has already proven successful in application in the fabrication of high quality graphene. Here we demonstrate its extension to the fabrication of high quality nanolayers from several layered materials. The strengths of this technique are its high throughput rate and ease of application. All fabrication parameters are controllable and need to be determined carefully. We report optimal parameters found for nine layered materials. In general, using optimal parameters results in high quality 2D layers, in most cases much larger than those obtained by 'Scotch tape' microcleavage, with higher yields and which are easily transferable to other substrates. Moreover the samples obtained are clean and the good optical contrast of these layers on the glass substrate makes their identification very easy. This is thus the technique of choice for making nanolayers in the laboratory from any layered material.

Published
2012
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4. Anodic bonded graphene

Author

Jean-Claude Bouillard, Olivier Beyssac, Jean-Marie Poumirol, R. Kumar, Dario Taverna, Walter Escoffier, Roger Gohler, Abhay Shukla, William Sacks, Mohamed Boukhicha, Emanuelle Lacaze, Massimiliano Marangolo, Adrian Balan, Université Pierre et Marie Curie - Paris 6 (UPMC), Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), de Lourmel, Université Fédérale Toulouse Midi-Pyrénées, and Université de Toulouse (UT)

Subjects
Materials science, Acoustics and Ultrasonics, Graphene, Graphene foam, Nanotechnology, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, symbols.namesake, law, Anodic bonding, 0103 physical sciences, Physical Sciences, symbols, Graphite, 010306 general physics, 0210 nano-technology, Raman spectroscopy, Graphene nanoribbons, Graphene oxide paper
Abstract

International audience; We show how to prepare graphene samples on a glass substrate with the anodic bonding method. In this method, a graphite precursor in flake form is bonded to a glass substrate with the help of an electrostatic field and then cleaved off to leave few layer graphene on the substrate. Now that several methods are available for producing graphene, the relevance of our method is in its simplicity and practicality for producing graphene samples of about 100 µm lateral dimensions. This method is also extensible to other layered materials. We discuss some detailed aspects of the fabrication and results from Raman spectroscopy, local probe microscopy, and transport measurements on these samples.

Published
2010
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