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1. Activation induced cytidine deaminase mutant (AID-His130Pro) from Hyper IgM 2 patient retained mutagenic activity on SHM artificial substrate

Author

Benoit Arcangioli, Hanen Ouadani, Beya Larguèche, Imen Ben-Mustapha, Hatem Masmoudi, François Rougeon, Houda Elloumi-Zghal, Mohamed-Ridha Barbouche, Tihana Jovanic, Meriem Ben-Ali, Mongia Hachicha, Dahmani M. Fathallah, Sylvie Garcia, Laboratoire de Transmission, Contrôle et Immunobiologie des Infections - Laboratory of Transmission, Control and Immunobiology of Infection (LR11IPT02), Institut Pasteur de Tunis, Réseau International des Instituts Pasteur (RIIP)-Réseau International des Instituts Pasteur (RIIP), Université de Tunis El Manar (UTM), Génétique et Biochimie du Développement, Institut Pasteur [Paris] (IP)-Centre National de la Recherche Scientifique (CNRS), Biologie des Populations Lymphocytaires, Dynamique du Génome - Dynamics of the genome, Hedi Chaker Hospital [Sfax], This work was supported by the Ministry of Health (Tunisia)., Centre National de la Recherche Scientifique (CNRS)-Institut Pasteur [Paris], and Institut Pasteur [Paris]-Centre National de la Recherche Scientifique (CNRS)

Subjects
0301 basic medicine, MESH: Somatic Hypermutation, Immunoglobulin, MESH: Mutation, [SDV]Life Sciences [q-bio], Immunology, Mutant, Nonsense mutation, Blotting, Western, Reversion, Somatic hypermutation, chemical and pharmacologic phenomena, medicine.disease_cause, Hyper-IgM Immunodeficiency Syndrome, 03 medical and health sciences, Jurkat Cells, Cytidine Deaminase, Activation-induced (cytidine) deaminase, medicine, MESH: Jurkat Cells, Humans, MESH: Blotting, Western, AID mutagenic activity, Molecular Biology, MESH: Cytidine Deaminase, Mutation, MESH: Humans, biology, Cofactors, Activation induced cytidine deaminase, Molecular biology, Immunoglobulin Class Switching, 3. Good health, Class switch recombination, MESH: Mutagenesis, Site-Directed, 030104 developmental biology, Immunoglobulin class switching, MESH: Hyper-IgM Immunodeficiency Syndrome, MESH: Immunoglobulin Class Switching, biology.protein, Mutagenesis, Site-Directed, Hyper IgM 2, Somatic Hypermutation, Immunoglobulin, DNA deamination
Abstract

International audience; Activation induced cytidine deaminase (AID) is an essential enzyme for class switch recombination (CSR) and somatic hypermutation (SHM) during secondary immune response. Mutations in the AICDA gene are responsible for Hyper IgM 2 syndrome where both CSR and SHM or only CSR are affected. Indeed, triggering either of the two mechanisms requires the DNA deamination activity of AID. Besides, different domains of AID may be differentially involved in CSR and SHM through their interaction with specific cofactors. Herein, we studied the AID-induced SHM activity of the AID-His130Pro mutant identified in a patient with Hyper IgM 2 syndrome. AID mutagenic activity was monitored by the reversion of nonsense mutations of the EGFP gene assessed by flow cytometry. We found that the His130Pro mutation, which affects CSR, preserves AID mutagenic activity. Indeed, the His130 residue is located in a putative specific CSR region in the APOBEC-like domain, known to involve CSR specific cofactors that probably play a major role in AID physiological activities.

Published
2016
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2. Computational Trials: Unraveling Motility Phenotypes, Progression Patterns, and Treatment Options for Glioblastoma Multiforme

Author

Thierry Colin, Fabio Raman, Elizabeth Scribner, Hassan M. Fathallah-Shaykh, Cornelia Wenger, Olivier Saut, University of Alabama at Birmingham [ Birmingham] (UAB), Department of neurology [Birmingham, Alabama], Department of Mathematics [Birmingham, Alabama], Modélisation Mathématique pour l'Oncologie (MONC), Institut de Mathématiques de Bordeaux (IMB), Université Bordeaux Segalen - Bordeaux 2-Université Sciences et Technologies - Bordeaux 1-Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux (Bordeaux INP)-Centre National de la Recherche Scientifique (CNRS)-Université Bordeaux Segalen - Bordeaux 2-Université Sciences et Technologies - Bordeaux 1-Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux (Bordeaux INP)-Centre National de la Recherche Scientifique (CNRS)-Institut Bergonié [Bordeaux], UNICANCER-UNICANCER-Inria Bordeaux - Sud-Ouest, Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria), Université Bordeaux Segalen - Bordeaux 2-Université Sciences et Technologies - Bordeaux 1-Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux (Bordeaux INP)-Centre National de la Recherche Scientifique (CNRS), Faculdade de Ciências [Lisboa], Universidade de Lisboa (ULISBOA), Université Bordeaux Segalen - Bordeaux 2-Université Sciences et Technologies - Bordeaux 1 (UB)-Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux (Bordeaux INP)-Centre National de la Recherche Scientifique (CNRS)-Université Bordeaux Segalen - Bordeaux 2-Université Sciences et Technologies - Bordeaux 1 (UB)-Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux (Bordeaux INP)-Centre National de la Recherche Scientifique (CNRS)-Institut Bergonié [Bordeaux], Université Bordeaux Segalen - Bordeaux 2-Université Sciences et Technologies - Bordeaux 1 (UB)-Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux (Bordeaux INP)-Centre National de la Recherche Scientifique (CNRS), and Universidade de Lisboa = University of Lisbon (ULISBOA)

Subjects
0301 basic medicine, Pathology, medicine.medical_specialty, Angiogenesis, Population, Motility, lcsh:Medicine, [SDV.CAN]Life Sciences [q-bio]/Cancer, Biology, Neovascularization, 03 medical and health sciences, 0302 clinical medicine, Cell Movement, Recurrence, medicine, Humans, [MATH.MATH-AP]Mathematics [math]/Analysis of PDEs [math.AP], Computer Simulation, education, lcsh:Science, Survival analysis, Cell Proliferation, education.field_of_study, Clinical Trials as Topic, Multidisciplinary, Neovascularization, Pathologic, Cell growth, Brain Neoplasms, lcsh:R, Reproducibility of Results, medicine.disease, Phenotype, Survival Analysis, [INFO.INFO-MO]Computer Science [cs]/Modeling and Simulation, Cell Hypoxia, 3. Good health, 030104 developmental biology, 030220 oncology & carcinogenesis, Cancer research, Disease Progression, lcsh:Q, medicine.symptom, Neoplasm Recurrence, Local, Glioblastoma, Research Article
Abstract

International audience; Glioblastoma multiforme is a malignant brain tumor with poor prognosis and high morbidity due to its invasiveness. Hypoxia-driven motility and concentration-driven motility are two mechanisms of glioblastoma multiforme invasion in the brain. The use of anti-angiogenic drugs has uncovered new progression patterns of glioblastoma multiforme associated with significant differences in overall survival. Here, we apply a mathematical model of glioblas- toma multiforme growth and invasion in humans and design computational trials using agents that target angiogenesis, tumor replication rates, or motility. The findings link highly- dispersive, moderately-dispersive, and hypoxia-driven tumors to the patterns observed in glioblastoma multiforme treated by anti-angiogenesis, consisting of progression by Expand- ing FLAIR, Expanding FLAIR + Necrosis, and Expanding Necrosis, respectively. Further- more, replication rate-reducing strategies (e.g. Tumor Treating Fields) appear to be effective in highly-dispersive and moderately-dispersive tumors but not in hypoxia-driven tumors. The latter may respond to motility-reducing agents. In a population computational trial, with all three phenotypes, a correlation was observed between the efficacy of the rate- reducing agent and the prolongation of overall survival times. This research highlights the potential applications of computational trials and supports new hypotheses on glioblastoma multiforme phenotypes and treatment options.

Published
2016
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3. Effects of Anti-Angiogenesis on Glioblastoma Growth and Migration: Model to Clinical Predictions

Author

Paula Province, Thierry Colin, Hassan M. Fathallah-Shaykh, Elizabeth Scribner, Asim K. Bag, Olivier Saut, Department of Mathematics [Birmingham, Alabama], University of Alabama at Birmingham [ Birmingham] (UAB), Modélisation, contrôle et calcul (MC2), Inria Bordeaux - Sud-Ouest, Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria)-Université de Bordeaux (UB)-Centre National de la Recherche Scientifique (CNRS), Department of neurology [Birmingham, Alabama], and Department of Radiology [Birmingham, Alabama]

Subjects
Male, Oncology, Pathology, Necrosis, Angiogenesis, lcsh:Medicine, Angiogenesis Inhibitors, Medicine and Health Sciences, Cell Mechanics, Biomechanics, lcsh:Science, Neurological Tumors, Multidisciplinary, Brain Neoplasms, Applied Mathematics, Physics, Middle Aged, Cell Hypoxia, 3. Good health, Bevacizumab, Neurology, Physical Sciences, Female, medicine.symptom, Glucocorticoid, [MATH.MATH-NA]Mathematics [math]/Numerical Analysis [math.NA], Research Article, medicine.drug, Adult, Biophysical Simulations, medicine.medical_specialty, Biophysics, Internal medicine, Differential Equations, medicine, Humans, Neoplasm Invasiveness, Theoretical Biology, Aged, Computational Neuroscience, Performance status, business.industry, Mechanism (biology), lcsh:R, Biology and Life Sciences, Computational Biology, Cancers and Neoplasms, medicine.disease, Clinical trial, Quality of Life, lcsh:Q, Glioblastoma, business, Mathematics, Neuroscience
Abstract

International audience; Glioblastoma multiforme (GBM) causes significant neurological morbidity and short survival times. Brain invasion by GBM is associated with poor prognosis. Recent clinical trials of bevacizumab in newly-diagnosed GBM found no beneficial effects on overall survival times; however, the baseline health-related quality of life and performance status were maintained longer in the bevacizumab group and the glucocorticoid requirement was lower. Here, we construct a clinical-scale model of GBM whose predictions uncover a new pattern of recurrence in 11/70 bevacizumab-treated patients. The findings support an exception to the Folkman hypothesis: GBM grows in the absence of angiogenesis by a cycle of proliferation and brain invasion that expands necrosis. Furthermore, necrosis is positively correlated with brain invasion in 26 newly-diagnosed GBM. The unintuitive results explain the unusual clinical effects of bevacizumab and suggest new hypotheses on the dynamic clinical effects of migration by active transport, a mechanism of hypoxia-driven brain invasion.

Published
2014
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4. A Multilayer Grow-or-Go Model for GBM: Effects of Invasive Cells and Anti-Angiogenesis on Growth

Author

Olivier Saut, Hassan M. Fathallah-Shaykh, Thierry Colin, Jean-Baptiste Lagaert, Institut de Mathématiques de Bordeaux (IMB), Université Bordeaux Segalen - Bordeaux 2-Université Sciences et Technologies - Bordeaux 1 (UB)-Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux (Bordeaux INP)-Centre National de la Recherche Scientifique (CNRS), Modélisation, contrôle et calcul (MC2), Inria Bordeaux - Sud-Ouest, Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria)-Université de Bordeaux (UB)-Centre National de la Recherche Scientifique (CNRS), Department of neurology [Birmingham, Alabama], University of Alabama at Birmingham [ Birmingham] (UAB), plafrim, cpu, and Université Bordeaux Segalen - Bordeaux 2-Université Sciences et Technologies - Bordeaux 1-Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux (Bordeaux INP)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Necrosis, Angiogenesis, General Mathematics, Immunology, Angiogenesis Inhibitors, Inversion recovery, Biology, Fluid-attenuated inversion recovery, Antibodies, Monoclonal, Humanized, Models, Biological, General Biochemistry, Genetics and Molecular Biology, medicine, Humans, Computer Simulation, Neoplasm Invasiveness, Tumor growth, Cancer biology, ComputingMilieux_MISCELLANEOUS, Cell Proliferation, General Environmental Science, Pharmacology, Neovascularization, Pathologic, Brain Neoplasms, General Neuroscience, Middle Aged, medicine.disease, [INFO.INFO-MO]Computer Science [cs]/Modeling and Simulation, 3. Good health, Bevacizumab, Computational Theory and Mathematics, Anti angiogenesis, Cancer research, Female, medicine.symptom, Glioblastoma, General Agricultural and Biological Sciences
Abstract

The recent use of anti-angiogenesis (AA) drugs for the treatment of glioblastoma multiforme (GBM) has uncovered unusual tumor responses. Here, we derive a new mathematical model that takes into account the ability of proliferative cells to become invasive under hypoxic conditions; model simulations generate the multilayer structure of GBM, namely proliferation, brain invasion, and necrosis. The model is able to replicate and justify the clinical observation of rebound growth when AA therapy is discontinued in some patients. The model is interrogated to derive fundamental insights int cancer biology and on the clinical and biological effects of AA drugs. Invasive cells promote tumor growth, which in the long run exceeds the effects of angiogenesis alone. Furthermore, AA drugs increase the fraction of invasive cells in the tumor, which explain progression by fluid-attenuated inversion recovery (FLAIR) signal and the rebound tumor growth when AA is discontinued.

Published
2014

5. Ventilator-associated pneumonia and ICU mortality in severe ARDS patients ventilated according to a lung-protective strategy

Author

Antoine Roch, Daniel Pulina, Karine Barrau, Gilles Perrin, Arnaud Gacouin, Jean-Marie Forel, Jean-Michel Arnal, Samir Jaber, Laurent Papazian, Elie Azoulay, Pascal Auquier, François Voillet, M. Fathallah, Service de Réanimation des Détresses Respiratoires et Infections Sévères, Assistance Publique - Hôpitaux de Marseille (APHM), Unité de Recherche sur les Maladies Infectieuses et Tropicales Emergentes (URMITE), Institut de Recherche pour le Développement (IRD)-Aix Marseille Université (AMU)-Institut National de la Santé et de la Recherche Médicale (INSERM)-IFR48, INSB-INSB-Centre National de la Recherche Scientifique (CNRS), Service de Réanimation Médicale, Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Hôpital Pontchaillou-CHU Pontchaillou [Rennes], Service de Réanimation des Urgences, Laboratoire de Santé Publique, Université de la Méditerranée - Aix-Marseille 2, Service de Réanimation Chirurgicale, Centre Hospitalier Régional Universitaire [Montpellier] (CHRU Montpellier)-CHU Saint-Eloi, Service de Réanimation polyvalente, Hopital Font-Pre, Hôpital Sainte-Marguerite [CHU - APHM] (Hôpitaux Sud ), Service de réanimation médicale, Assistance publique - Hôpitaux de Paris (AP-HP) (AP-HP)-Université Paris Diderot - Paris 7 (UPD7)-Groupe Hospitalier Saint Louis - Lariboisière - Fernand Widal [Paris], Assistance publique - Hôpitaux de Paris (AP-HP) (AP-HP), Institut des sciences biologiques (INSB-CNRS)-Institut des sciences biologiques (INSB-CNRS)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Hôpital Pontchaillou-CHU Pontchaillou [Rennes], Centre Hospitalier Régional Universitaire [Montpellier] (CHRU Montpellier)-Hôpital Saint Eloi (CHRU Montpellier), Centre Hospitalier Régional Universitaire [Montpellier] (CHRU Montpellier), Université Paris Diderot - Paris 7 (UPD7)-Groupe Hospitalier Saint Louis - Lariboisière - Fernand Widal [Paris], Assistance publique - Hôpitaux de Paris (AP-HP) (AP-HP)-Assistance publique - Hôpitaux de Paris (AP-HP) (AP-HP), and BMC, Ed.

Subjects
Male, medicine.medical_specialty, ARDS, [SDV.MHEP.PHY] Life Sciences [q-bio]/Human health and pathology/Tissues and Organs [q-bio.TO], Critical Care and Intensive Care Medicine, Statistics, Nonparametric, law.invention, Placebos, 03 medical and health sciences, 0302 clinical medicine, Randomized controlled trial, Double-Blind Method, law, Risk Factors, medicine, [SDV.MHEP.PHY]Life Sciences [q-bio]/Human health and pathology/Tissues and Organs [q-bio.TO], Humans, Glasgow Coma Scale, Prospective Studies, Prospective cohort study, Intensive care medicine, Cross Infection, Respiratory Distress Syndrome, Lung, Chi-Square Distribution, business.industry, Incidence (epidemiology), Incidence, Ventilator-associated pneumonia, Pneumonia, Ventilator-Associated, 030208 emergency & critical care medicine, Middle Aged, medicine.disease, bacterial infections and mycoses, Respiration, Artificial, 3. Good health, respiratory tract diseases, Pneumonia, Intensive Care Units, medicine.anatomical_structure, 030228 respiratory system, Commentary, Female, France, business
Abstract

International audience; ABSTRACT: INTRODUCTION: Ventilator-associated pneumonia (VAP) may contribute to the mortality associated with acute respiratory distress syndrome (ARDS). We aimed to determine the incidence, outcome, and risk factors of bacterial VAP complicating severe ARDS in patients ventilated using a strictly standardized lung-protective strategy. METHODS: This prospective epidemiological study was done in all patients included in the 339 patients with severe ARDS included in a multicenter randomized, placebo-controlled double-blind trial of cisatracurium besylate in severe ARDS patients. Patients with suspected VAP underwent bronchoalveolar lavage to confirm the diagnosis. RESULTS: Ninety-eight patients (28.9%) presented at least one episode of microbiologically documented bacterial VAP, including 41 (41.8%) who died in the ICU, compared to 74 (30.7%) of the 241 patients without VAP (P=0.05). After adjustment, age and severity at baseline, but not VAP, were associated with ICU death. Cisatracurium besylate therapy within 2 days of ARDS onset decreased the risk of ICU death. Factors independently associated with an increased risk to develop a VAP were male sex, and worse admission Glasgow Coma Scale score. Tracheostomy, enteral nutrition and the use of a subglottic secretion drainage device were protective. CONCLUSIONS: In patients with severe ARDS receiving lung-protective ventilation, VAP was associated with an increased crude ICU mortality which did not remain significant after adjustment.

Published
2012
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6. High polysilicon TFT field effect mobility reached thanks to slight phosphorus content in the active layer

Author

Mariem Zaghdoudi, Régis Rogel, M. Fathallah, N. Alzaied, Tayeb Mohammed-Brahim, Institut d'Electronique et de Télécommunications de Rennes (IETR), Centre National de la Recherche Scientifique (CNRS)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), Institut d'Électronique et des Technologies du numéRique (IETR), Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Ecole Supérieure des Sciences et Techniques [Tunis] (ESSTT), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), and Université de Nantes (UN)-Université de Rennes 1 (UR1)

Subjects
010302 applied physics, Materials science, Phosphorus, Polysilicon depletion effect, Doping, Analytical chemistry, Oxide, Field effect, chemistry.chemical_element, Bioengineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Active layer, Biomaterials, chemistry.chemical_compound, chemistry, Mechanics of Materials, Thin-film transistor, 0103 physical sciences, Grain boundary, 0210 nano-technology
Abstract

International audience; The paper deals with the effect of slightly phosphorus atoms introduced during deposition of polysilicon films. Polysilicon films are used as an active layer in thin film transistors (TFTs) fabricated on glass substrates at a maximum temperature of 600 °C.Three phosphorus atoms contents, determined by the value of the phosphine to silane ratio: Γ (3.7 × 10− 7, 8 × 10− 7, 26 × 10− 6), are used to optimize the active layer quality. The in-situ doped layers induce a better stability of the electrical characteristics, a higher mobility and lower value of the threshold voltage for the slightly doped active layers [M. Zaghdoudi, M.M. Abdelkrim, M. Fathallah, T. Mohammed-Brahim and F. Le-Bihan Control of the weak phosphorus doping in polysilicon, Materials Science and Forum, Vols. 480-481 (2005) pp.305.]. The present work shows that the effect of slightly phosphorus content improves the quality of oxide/polysilicon interface and decreases the defects density. Degradation of electrical properties is shown to originate from the creation of defect at the channel-interface oxide and in the grain boundaries. The effect of temperature change on the electrical properties was studied and the behaviour was also analyzed.

Published
2008
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7. Phosphorus doping and deposition pressure effects on optical and electrical properties of polysilicon

Author

Mariem Zaghdoudi, M. Fathallah, Tayeb Mohammed-Brahim, Régis Rogel, M.N. Abdelkrim, Institut d'Electronique et de Télécommunications de Rennes (IETR), Centre National de la Recherche Scientifique (CNRS)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), Ecole Supérieure des Sciences et Techniques [Tunis] (ESSTT), Institut d'Électronique et des Technologies du numéRique (IETR), Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), and Université de Nantes (UN)-Université de Rennes 1 (UR1)

Subjects
inorganic chemicals, Amorphous silicon, Deposition pressure, Materials science, Silicon, Annealing (metallurgy), Inorganic chemistry, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Chemical vapor deposition, engineering.material, 01 natural sciences, 7. Clean energy, Biomaterials, chemistry.chemical_compound, 0103 physical sciences, Thin film, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, technology, industry, and agriculture, 021001 nanoscience & nanotechnology, Amorphous solid, Polycrystalline silicon, chemistry, Chemical engineering, Mechanics of Materials, engineering, 0210 nano-technology
Abstract

The optical and electrical properties of amorphously deposited and then post-crystallized silicon films are studied as a function of the deposition pressure and the phosphorus doping. Amorphous silicon films are deposited in a high pressure regime by SAPCVD (Sub-Atmospheric Pressure Chemical Vapour Deposition) to study the effect of the deposition pressure. They are also deposited in a low pressure regime by LPCVD (Low Pressure Chemical Vapour Deposition) to study the effect of a low phosphorus doping. Both types of amorphous films are then crystallized in the solid phase at 600 °C. Using different optical and electrical characterization techniques, the beneficial effect of a high pressure as well as of a weak phosphorus doping on the decrease of the defect density is highlighted. These results give some ways to improve the quality of polysilicon enough to be used in photovoltaic or in thin film electronic devices.

Published
2006

8. Control of the Weak Phosphorus Doping in Polysilicon

Author

M. Zaghdoudi, M.M. Abdelkrim, M. Fathallah, T. Mohammed-Brahim, F. Le Bihan, Institut d'Electronique et de Télécommunications de Rennes (IETR), Centre National de la Recherche Scientifique (CNRS)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), Institut d'Électronique et des Technologies du numéRique (IETR), Université de Nantes (UN)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Ecole Supérieure des Sciences et Techniques [Tunis] (ESSTT), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), and Nantes Université (NU)-Université de Rennes 1 (UR1)

Subjects
Materials science, Passivation, Inorganic chemistry, 02 engineering and technology, Chemical vapor deposition, engineering.material, 01 natural sciences, symbols.namesake, Electrical resistivity and conductivity, 0103 physical sciences, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Condensed matter physics, Mechanical Engineering, Doping, Fermi level, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Polycrystalline silicon, Mechanics of Materials, Density of states, symbols, engineering, 0210 nano-technology
Abstract

The optical and electrical properties of undoped and low doped polycrystalline silicon films deposited by LPCVD technique are analysed. Photothermal deflexion spectroscopy, and electrical conductivity in the temperature range 50- 475 K are used. The effect of low phosphorus doping on the density of defects, electrical parameters and hopping conduction are examined and interpreted in conjunction with the passivation of defects by the introduction of phosphorus atoms. The density of states at the Fermi level is also calculated.

Published
2003

9. Manufacturing technology effect on current pulse handling performance of metallized polypropylene film capacitors

Author

Jorge Ferreira, Pascal Venet, M. Fathallah, Gérard Rojat, A. Al-Majid, M.H. El-Husseini, Delft University of Technology (TU Delft), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Centre de génie électrique de Lyon (CEGELY), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon

Subjects
Materials science, Acoustics and Ultrasonics, 02 engineering and technology, 01 natural sciences, CAPABILITY, 010305 fluids & plasmas, law.invention, Current pulse, chemistry.chemical_compound, Reliability (semiconductor), law, Hardware_GENERAL, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Composite material, POWER APPLICATIONS, Polypropylene, Manufacturing process, 020208 electrical & electronic engineering, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Condensed Matter Physics, Filter capacitor, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Pulse (physics), Capacitor, Film capacitor, chemistry
Abstract

Référence éditeur : http://www.iop.org/EJ/abstract/0022-3727/36/18/019/; International audience; In this paper, the testing of the pulse-withstanding capability of metallized polypropylene film (MPPF) capacitors is reported. Four groups of capacitors having the same electrical characteristics but different geometry were considered for the test. Capacitors with long geometry seem to have poorer pulse handling performance for similar electrical stress conditions. However, the premature failure of one of the capacitor groups tested suggests that the quality of the end-edge contact is strongly dependent on the physical features of the manufacturing process. The end-edge contact plays a vital role in the current pulse handling capability of MPPF capacitors, which varies from a few hundred to several thousand discharging cycles depending on the geometry of the capacitor and the end-edge contact manufacturing process.

Published
2003
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10. FPGA and mixed FPGA-DSP implementations of electrical drive algorithms

Author

Jordi Carrabina, Christian Gontrand, P. Foussier, P. J. Viverge, Francis Calmon, M. Fathallah, Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre de génie électrique de Lyon (CEGELY), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Instituto de Microelectrònica de Barcelona (IMB-CNM), Centro Nacional de Microelectronica [Spain] (CNM)-Consejo Superior de Investigaciones Científicas [Madrid] (CSIC), and Ampère, Publications

Subjects
Vector control, business.industry, Computer science, 010401 analytical chemistry, Design flow, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 02 engineering and technology, 01 natural sciences, 020202 computer hardware & architecture, 0104 chemical sciences, Software, Direct torque control, Embedded system, 0202 electrical engineering, electronic engineering, information engineering, business, Field-programmable gate array, Digital signal processing, FPGA prototype, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience; This paper deals with the implementation of control algorithms for alternative current (ac) motors using co-design methodology for hard or mixed hardware/software solutions. The authors focus on the design flow and experiments using FPGA / DSP platform. A full FPGA implementation of the well-known field oriented control strategy is presented. In a next step a mixed FPGA / DSP platform is presented associated with preliminary results concerning a mixed implementation of the scalar control algorithm.

Published
2002

11. Carbonic anhydrase II (CA II) deficiency in Maghrebian patients: evidence for founder effect and genomic recombination at the CA II locus

Author

Dahmani M. Fathallah, William S. Sly, Denis Lepaslier, Koussay Dellagi, Mohamed Bejaoui, Khelifa Chater, Laboratoire d'Immunologie, Institut Pasteur de Tunis, Institut Pasteur de Tunis, Réseau International des Instituts Pasteur (RIIP)-Réseau International des Instituts Pasteur (RIIP), Hôpital Charles Nicolle [Tunis], Centre d'Etude du Polymorphisme Humain (CEPH), Université Paris Diderot - Paris 7 (UPD7)-Institut Universitaire d'Hématologie (IUH), Université Paris Diderot - Paris 7 (UPD7)-Fondation Jean Dausset, Université de Tunis [Tunis], Saint Louis University (SLU), This work was supported by a grant from the Tunisian State Secretariat for Scientific Research and Technology., We are grateful to the members of the families for their kind collaboration in the study. We thank Dr. H. Louzir for his help with the art work, Fondation Jean Dausset-Institut Universitaire d'Hématologie (IUH), Université Paris Diderot - Paris 7 (UPD7)-Université Paris Diderot - Paris 7 (UPD7), and Université de Tunis

Subjects
Male, MESH: Introns, [SDV]Life Sciences [q-bio], DNA Mutational Analysis, 030232 urology & nephrology, MESH: Isoenzymes/genetics, MESH: Genotype, chemistry.chemical_compound, Exon, MESH: Carbonic Anhydrases/genetics, 0302 clinical medicine, MESH: Saudi Arabia/ethnology, MESH: DNA Mutational Analysis, Genetics (clinical), Carbonic Anhydrases, Sequence Tagged Sites, Recombination, Genetic, Genetics, 0303 health sciences, education.field_of_study, MESH: Recombination, Genetic, Acidosis, Renal Tubular, Exons, Pedigree, 3. Good health, Isoenzymes, Osteopetrosis, Female, MESH: Tunisia, MESH: Intellectual Disability/genetics, Tunisia, MESH: Acidosis, Renal Tubular/genetics, Genotype, TaqI, MESH: Pedigree, RNA Splicing, Carbonic anhydrase II, Population, Saudi Arabia, Locus (genetics), Biology, 03 medical and health sciences, Intellectual Disability, MESH: Sequence Tagged Sites, Humans, Gene conversion, Allele, education, Alleles, 030304 developmental biology, MESH: Humans, MESH: Alleles, Introns, MESH: Male, MESH: Isoenzymes/deficiency, chemistry, MESH: Osteopetrosis/genetics, MESH: Carbonic Anhydrases/deficiency, MESH: RNA Splicing, MESH: Exons, MESH: Female, Founder effect
Abstract

International audience; A splice junction mutation at the exon 2 – intron 2 boundary of the carbonic anhydrase II (CA II) gene was previously shown to be the unique mutation underlying the CA II deficiency syndrome in patients of Arab descent. Fourteen Tunisian (Maghrebian) families with a history of osteopetrosis, renal tubular acidosis, mental retardation, and CA II deficiency were studied to test the hypothesis that the mutation, found in all 24 patients, derived from a common ancestor originating in the Arabic Peninsula. A filiation study permitted us to trace these families back to a common Arabic tribe that settled in the Maghreb in the tenth century, indicating a common ethnic origin for these families. Segregation of the mutation with a TaqI biallelic restriction site polymorphism upstream of the CA II gene was studied by sequence-tagged site analysis in all the family members. These studies showed cosegregation of the Taq (-) allele with the mutation in 12 families out of 14. This observation supports a founder effect to explain the common CA II deficiency allele in this population. In the remaining two families, a genomic recombination or gene conversion occurred between the TaqI restriction marker and the mutation causing the disease. The relatively high recombination frequency suggests the presence of a hot spot for recombination or gene conversion at the CA II locus.

Published
1997
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