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International audience; We present a complete characterization of reflective electroabsorption modulators (EAMs) monolithically integrated with semiconductor optical amplifiers (SOAs), components that are capable of operating beyond 50 Gb/s in the C-band. The devices are based on GaInAsP multiple quantum wells on InP substrate, leveraging semi-insulating buried heterostructure waveguide definition and butt-joint integration technologies. Different device configurations, based on 80-μm and 150-μm long EAMs, are fabricated and characterized in both static and dynamic modes. The frequency response of the 80-μm long EAM is still flat at 26.5 GHz (setup upper limit) whereas the 150-μm long EAM exhibits a 3-dB cutoff bandwidth of 23 GHz. A zero-chirp is achieved for EAM reverse bias voltages between −1.2 V and −1.5 V depending on the wavelength. Under large-signal modulation, the frequency chirp induced by the shorter EAM is almost half that of the longer EAM, with their respective peak values being +1.5/−2 GHz and +3.2/−3.7 GHz (rising/falling edges) at 1545 nm (−1.3 V bias, 2.6 V voltage swing). We obtained high dynamic extinction ratios of ~14.5 dB and ~8 dB from the longer and the shorter EAMs, respectively, when they are operated at 25 Gb/s using non-return-to-zero coding. Finally, we achieved 12 km and 16 km colorless transmissions in the C-band (between 1530 nm and 1545 nm) over a standard single-mode fiber without equalization using the 150-μm and the 80-μm EAMs, respectively, with 4.5 dB and 2.5 dB dispersion penalties at a bit error rate of 10E−3.

In this work, we present the fabrication process of a $3~\mu \text{m}$ -thick AlGaInAs-based vertical p-i-n laser diode structure grown on a directly bonded InP-SiO2/Si (InPoSi) substrate. High-quality epitaxial growth on InPoSi is reported. Based on these structures, the fabrication process of Fabry-Perot broad lasers is presented. Device performance is compared to the ones obtained from the same growth run on an InP substrate as a reference. High electrical properties of the n and p contacts are demonstrated. Lasing operation in the pulse regime is shown up to 50°C. Threshold current densities as low as 0.4 kA/cm 2 at 20°C are obtained for the laser on InPoSi, comparable to the ones obtained for the reference on InP substrate.

we present a 50 Gb/s O-band reflective electroabsorption modulator operating in both non-return-to-zero (NRZ) and PAM-4 modulation formats without equalization. We obtained >9 dB NRZ dynamic extinction ratio for a peak-to-peak voltage of 2.4 V.