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1. Plasma Oscillations in Nanotransistors: Application to THz Radiations Detection and Generation

Author

Christophe Palermo, G. Sabatini, Pavel Shiktorov, Philippe Nouvel, E. Starikov, Jérémi Torres, Hugues Marinchio, Luca Varani, Viktoras Gružinskis, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Semiconductor Physics Institute (Vilnius), and Vilnius University [Vilnius]

Subjects
010302 applied physics, Physics, Terahertz radiation, General Physics and Astronomy, Biasing, 02 engineering and technology, High-electron-mobility transistor, Plasma, 021001 nanoscience & nanotechnology, Plasma oscillation, 01 natural sciences, Computational physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Quality (physics), Nuclear magnetic resonance, 0103 physical sciences, Harmonic, 0210 nano-technology, Excitation, ComputingMilieux_MISCELLANEOUS
Abstract

By means of a numerical hydrodynamic model, we consider the mechanism of collective plasma oscillations in a field-effect transistor channel under different excitations and biasing conditions. First, we consider the case of a device externally-excited by a harmonic optical beating or an electronic excitation under constant current condition at the drain. Both situations exhibit sharp resonances related to the first odd plasma modes illustrating the possibility of using the HEMT as a terahertz photomixer or detector. Then, we demonstrate that the frequencies, amplitudes and quality factors of the resonances can be strongly modified by varying the drain biasing condition from currentto voltage-driven operation.

Published
2011
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2. Plasma waves induced by the optical beating in HEMT channels as an expected source of TeraHertz radiation generation

Author

S. Asmontas, P. Shiktorov, E. Starikov, V. Gružinskis, L. Varani, G. Sabatini, H. Marinchio, J. Torres, Marília Caldas, Nelson Studart, Semiconductor Physics Institute (Vilnius), Semiconductor Physics Institute, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Physics, Electron mobility, Condensed matter physics, business.industry, Terahertz radiation, Bipolar junction transistor, 02 engineering and technology, High-electron-mobility transistor, Plasma, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI.TRON]Engineering Sciences [physics]/Electronics, Amplitude, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Quantum well, Excitation, ComputingMilieux_MISCELLANEOUS
Abstract

Results of hydrodynamic simulation of HEMT performance under photo‐mixing excitation of free carriers in the conducting channel are presented. A resonant enhancement of current amplitudes at the beating frequency due to excitation of 2D plasma waves is demonstrated.

Published
2011
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3. Pseudo-two-dimensional Poisson equation for the modeling of field-effect transistors

Author

Hugues Marinchio, Luca Varani, Pavel Shiktorov, G. Sabatini, E. Starikov, Christophe Palermo, Viktor Gružinskis, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Semiconductor Physics Institute (Vilnius), and Semiconductor Physics Institute

Subjects
010302 applied physics, Physics, Transistor channel, Computer simulation, Transistor, Monte Carlo method, 02 engineering and technology, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Computer Science::Emerging Technologies, law, Modeling and Simulation, 0103 physical sciences, Field-effect transistor, Statistical physics, Electrical and Electronic Engineering, Poisson's equation, 0210 nano-technology, Convection–diffusion equation, ComputingMilieux_MISCELLANEOUS
Abstract

A modified Poisson equation able to take into account the influence of gates and a ?-doping in FETs and HEMTs is proposed. This equation can be solved self-consistently together with 1D transport equations along inhomogeneous transistor channels like those of the hydrodynamic or drift-diffusion approximations or with a Monte Carlo simulator used to describe carrier transport in n+nn+ structures.

Published
2010
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4. Monte Carlo study of ballistic effects in high speed InAs-based quantum hot electron transistor

Author

G. Sabatini, Hugues Marinchio, T. Laurent, R. Teissier, Javier Mateos, Tomas Gonzalez, Luca Varani, Helena Rodilla, Christophe Palermo, P. Ziade, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Libanaise, Departamento de Fisica Aplicada, Universidad de Salamanca, Universidad de Salamanca, and Composants à Nanostructure pour le moyen infrarouge (NANOMIR)

Subjects
010302 applied physics, Physics, Phonon, business.industry, Scattering, Terahertz radiation, Monte Carlo method, Transistor, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, law, Electric field, Ballistic conduction, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Quantum, ComputingMilieux_MISCELLANEOUS
Abstract

By means of a Monte Carlo simulation, we have studied the collector transit region of an innovative InAs/AlSb quantum hot electron transistor constituted by a 100 nm-long InAs bulk region. This original vertical transport device has the potential to efficiently exploit the unrivalled transport properties of InAs to reach THz frequencies.

Published
2010
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5. Hydrodynamic study of terahertz three-dimensional plasma resonances in InGaAs diodes

Author

Thibault Laurent, G. Sabatini, Philippe Nouvel, Ziad Kallassy, Luca Varani, Hugues Marinchio, Christophe Palermo, Pierre Ziadee, Université Libanaise, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Physics, Condensed matter physics, Terahertz radiation, Physics::Optics, Resonance, 02 engineering and technology, Plasma, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Molecular physics, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, Amplitude, Electric field, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology, Excitation, Plasmon, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

We investigate 3D plasma resonances in InGaAs n+ − n − n+ diodes undergoing an optical beating excitation at room temperature. For this sake, we calculate the electric field response in the middle of the diode regions by using a hydrodynamic approach coupled to a one-dimensional Poisson solver. The results show clearly the presence of three-dimensional plasma resonances in the terahertz frequency domain for the two region types. We also emphasize a strong coupling between the plasma modes. Finally, the influence of both geometry and doping profile on the amplitude and the frequency of the resonances is evaluated.

Published
2010
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6. Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor

Author

G. Sabatini, Laurent Chusseau, Jeremie Torres, Hugues Marinchio, Viktoras Gružinskis, Philippe Nouvel, Pavel Shiktorov, Luca Varani, Christophe Palermo, E. Starikov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Semiconductor Physics Institute (Vilnius), and Vilnius University [Vilnius]

Subjects
010302 applied physics, Physics, Electron mobility, Physics and Astronomy (miscellaneous), Terahertz radiation, business.industry, Local oscillator, Transistor, Physics::Optics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, law.invention, Terahertz spectroscopy and technology, [SPI.TRON]Engineering Sciences [physics]/Electronics, law, 0103 physical sciences, Optoelectronics, Nonlinear element, Field-effect transistor, Heterodyne detection, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

A method for the heterodyne detection of terahertz (THz) signals is proposed. A high electron mobility transistor is used as a nonlinear element, while the optical beating of two laser beams exciting plasma waves in the transistor channel plays the role of the THz local oscillator. High efficiency and room-temperature operation of such a mixer are demonstrated by numerical simulations.

Published
2010
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7. Hydrodynamic simulation of heterodyne terahertz detection in a field effect transistor

Author

T. Laurent, Jeremie Torres, Luca Varani, G. Sabatini, Annick Penarier, Hugues Marinchio, Stéphane Blin, Viktoras Gruzinskis, P. Ziade, Philippe Nouvel, Pavel Shiktorov, Laurent Chusseau, E. Starikov, C. Palermo, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Libanaise, Semiconductor Physics Institute (Vilnius), Vilnius University [Vilnius], Coris BioConcept, Omega, Laboratoire de l'Accélérateur Linéaire (LAL), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), and Radiations et composants (RADIAC)

Subjects
Heterodyne, Physics, business.industry, Terahertz radiation, Local oscillator, Transistor, Astrophysics::Instrumentation and Methods for Astrophysics, Physics::Optics, 02 engineering and technology, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, proceedings, law.invention, 020210 optoelectronics & photonics, Optics, law, 0202 electrical engineering, electronic engineering, information engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Field-effect transistor, Nonlinear element, Heterodyne detection, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

We propose a method for the heterodyne detection of terahertz (THz) signals. The nonlinear element is constituted by the channel of an High Electron Mobility Transistor (HEMT), while the optical beating of two laser beams exciting plasma waves in the transistor channel plays the role of the THz local oscillator. We numerically show, through an hydrodynamic modelling, the efficiency of such a mixer.

Published
2010

8. Hydrodynamic study of terahertz three-dimensional plasma resonances in InGaAs diodes

Author

Ziad Kallassy, G. Sabatini, Luca Varani, P. Ziade, Hugues Marinchio, Christophe Palermo, Université Libanaise, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, History, Terahertz radiation, business.industry, Physics::Optics, 02 engineering and technology, Plasma, 021001 nanoscience & nanotechnology, 01 natural sciences, Computer Science Applications, Education, Poisson solver, [SPI.TRON]Engineering Sciences [physics]/Electronics, 010309 optics, Photoexcitation, Amplitude, Frequency domain, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Excitation, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

We investigate the presence of plasma resonances in InGaAs diodes under different optical excitation conditions. In particular, we study the case of diodes submitted to an optical photoexcitation presenting a beating in the terahertz frequency domain. The responses of the diodes are calculated using a hydrodynamic approach coupled to a one-dimensional Poisson solver. The results show clearly the presence of three-dimensional plasma resonances in the terahertz frequency domain. We also show that the resonances frequency and amplitude can be tuned by modifying the diode geometry and doping profile.

Published
2009
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9. Anomalous behavior of electronic noise related to the onset of current instabilities in n + nn + diodes

Author

Luca Reggiani, G. Sabatini, Luca Varani, E. Starikov, C. Palermo, T. Laurent, Hugues Marinchio, Pavel Shiktorov, Viktoras Gružinskis, Semiconductor Physics Institute (Vilnius), Vilnius University [Vilnius], Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Dipartimento di Ingegneria dell’Innovazione and Istituto Nazionale di Fisica della Materia, Universita` di Lecce

Subjects
010302 applied physics, Statistics and Probability, Physics, Condensed matter physics, Phonon, Monte Carlo method, Statistical and Nonlinear Physics, Anomalous behavior, 01 natural sciences, Instability, Noise (electronics), [SPI.TRON]Engineering Sciences [physics]/Electronics, Lattice (order), 0103 physical sciences, Statistics, Probability and Uncertainty, 010306 general physics, ComputingMilieux_MISCELLANEOUS, Voltage, Diode
Abstract

We investigate the noise behavior in the presence of current instabilities induced by optical phonon emission. Calculations are carried out by means of Monte Carlo particle simulations of InP n+nn+ diodes at lattice temperatures below about 80 K. A giant enhancement of the low-frequency noise is observed in a narrow voltage region, which precedes the onset of current self-oscillations caused by the instability. A possible origin of this enhancement is discussed. The impact of the non-linear effects on the anomalous low-frequency noise behavior is stressed.

Published
2009
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10. Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels

Author

G. Sabatini, E. Starikov, Lino Reggiani, Luca Varani, Hugues Marinchio, Pavel Shiktorov, Viktoras Gružinskis, Semiconductor Physics Institute (Vilnius), Vilnius University [Vilnius], Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Dipartimento di Ingegneria dell’Innovazione and Istituto Nazionale di Fisica della Materia, Universita` di Lecce

Subjects
Statistics and Probability, Induced high electron mobility transistor, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, Noise (electronics), law.invention, Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Flicker noise, 010306 general physics, ComputingMilieux_MISCELLANEOUS, Static induction transistor, 010302 applied physics, Physics, Condensed matter physics, Transistor, Bipolar junction transistor, Statistical and Nonlinear Physics, Computational physics, Threshold voltage, [SPI.TRON]Engineering Sciences [physics]/Electronics, Field-effect transistor, Statistics, Probability and Uncertainty, Hardware_LOGICDESIGN
Abstract

In the framework of analytical and hydrodynamic models for the description of carrier transport and noise in high electron mobility transistor/field-effect transistor channels the main features of the intrinsic noise of transistors are investigated under continuous branching of the current between channel and gate. It is shown that the current-noise and voltage-noise spectra at the transistor terminals contain an excess noise related to thermal excitation of plasma wave modes in the dielectric layer between the channel and gate. It is found that the set of modes of excited plasma waves can be governed by the external embedding circuits, thus violating a universal description of noise in terms of Norton and Thevenin noise generators.

Published
2009
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11. Electronic, optical and thermal excitation of plasma waves in HEMTs: A theoretical study

Author

Evguenij Starikov, G. Sabatini, Hugues Marinchio, Christophe Palermo, Luca Varani, Viktor Gružinskis, Pavel Shiktorov, Laurent Chusseau, Jérémi Torres, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Semiconductor Physics Institute (Vilnius), Semiconductor Physics Institute, L. Varani, and L. Varani, C. Palermo and G. Bastard

Subjects
Physics, History, Transistor, Analytical chemistry, Spectral density, Biasing, 02 engineering and technology, Plasma, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Noise (electronics), Spectral line, Computer Science Applications, Education, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, 020210 optoelectronics & photonics, law, 0202 electrical engineering, electronic engineering, information engineering, Harmonic, Atomic physics, 0210 nano-technology, Excitation, ComputingMilieux_MISCELLANEOUS
Abstract

We investigate the influence of collective plasma modes in a field-effect transistor channel under different excitations and biasing conditions. First, we study the case of a device externally-excited by a harmonic optical beating or an electronic excitation and current-driven at the drain. The harmonic and continuous responses of the transistor are calculated using a pseudo-two-dimensional hydrodynamic approach. They show sharp resonances related to the first odd plasma modes, whose frequencies and amplitudes can be modified by playing on the drain bias. Then, through the generalized impedance-field method we calculate also the spectral density of drain voltage fluctuations in the absence of external excitations. Also these noise spectra exhibit peaks corresponding to the odd plasma modes.

Published
2009
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12. Plasma Waves Subterahertz Optical Beating Detection and Enhancement in Long-Channel High-Electron-Mobility Transistors: Experiments and Modeling

Author

Pavel Shiktorov, Christophe Palermo, G. Sabatini, E. Starikov, Hugues Marinchio, Viktoras Gruzinskis, Philippe Nouvel, Laurent Chusseau, Jérémi Torres, Luca Varani, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Semiconductor Physics Institute (Vilnius), Semiconductor Physics Institute, and Radiations et composants (RADIAC)

Subjects
Materials science, Physics::Optics, Plasma oscillation, 01 natural sciences, law.invention, Gallium arsenide, chemistry.chemical_compound, law, 0103 physical sciences, Electrical and Electronic Engineering, 010306 general physics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Waves in plasmas, business.industry, Transistor, Plasma, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Laser, Atomic and Molecular Physics, and Optics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Photoexcitation, chemistry, Optoelectronics, business, Excitation
Abstract

International audience; A photomixed laser beam of two 1.55 mum continuous-wave lasers is used for interband photoexcitation in submicron gate length InAlAs/InGaAs transistors. Results show the clear excitation of plasma oscillation modes in the transistor channel. A strong amplification of the optical beating detection in the 0-600 GHz range is observed as a function of drain-source voltage. Numerical results, using hydrodynamic model coupled to a pseudo-2D Poisson equation, are in good agreement with experiments concerning the plasma frequency dependence with gate voltage. Moreover, this model confirms both optical beating detection at subterahertz frequencies and the enhancement observed when drain-source voltage increases.

Published
2008
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13. Conception and Fabrication of InAs-based Hot Electron Transistor

Author

Luca Varani, Alexei N. Baranov, G. Boissier, Roland Teissier, T. Daoud, G. Sabatini, J. Devenson, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), and Eric, Dauverchain

Subjects
Fabrication, Materials science, Heterojunction bipolar transistor, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, chemistry.chemical_compound, law, Etching, 0103 physical sciences, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Doping, Transistor, Heterojunction, 021001 nanoscience & nanotechnology, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, Indium phosphide, Optoelectronics, 0210 nano-technology, business, Indium gallium arsenide
Abstract

An innovative hot electron transistor based on InAs/AlSb heterostructures is proposed and studied. First fabricated devices demonstrated static current gain of 5 at room temperature. The potential of this device for high frequency operation is also discussed.

Published
2008

14. Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors

Author

Andrey Shchepetov, Christophe Palermo, Viktoras Gruzinskis, Luca Varani, Hugues Marinchio, G. Sabatini, Y. Roelens, Sylvain Bollaert, Pavel Shiktorov, Philippe Nouvel, Frederic Teppe, Laurent Chusseau, E. Starikov, Jérémi Torres, Institut d’Electronique et des Systèmes (IES), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Térahertz, hyperfréquence et optique (TéHO), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Radiations et composants (RADIAC), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université Polytechnique Hauts-de-France (UPHF)-Institut supérieur de l'électronique et du numérique (ISEN), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2)

Subjects
[PHYS]Physics [physics], business.industry, Terahertz radiation, Chemistry, Physics::Optics, 02 engineering and technology, Plasma, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Plasma oscillation, Laser, 01 natural sciences, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, Photoexcitation, Optics, law, Harmonics, 0103 physical sciences, Poisson's equation, 010306 general physics, 0210 nano-technology, business, Excitation
Abstract

International audience; A photomixed laser beam of two 1.55 μm lasers is used to obtain interband photoexcitation at the difference frequency and at room temperature in suvmicron gate length INAIA/InGaAs transistors. Results show the clear excitation of plasma oscillation modes in the transistors channel Fundamental plasma resonant frequency and its add harmonics can be tuned with the applied gate voltage. Numerical simulation have also been performed using a hydrodynamic approach coupled to a pseudo-2D Poisson equation. Numerical results are in qualitative agreement with experiments and confirm optical beatin detection at terahertz frequencies.

Published
2008
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15. Modified hydrodynamic approach for the modeling of high-frequency noise in FETs

Author

H. Marinchio, V. Gružinkis, Pavel Shiktorov, G. Sabatini, Luca Varani, Luca Reggiani, Christophe Palermo, J. Pousset, E. Starikov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Semiconductor Physics Institute (Vilnius), Semiconductor Physics Institute, Dipartimento di Ingegneria dell’Innovazione and Istituto Nazionale di Fisica della Materia, Universita` di Lecce, and M. Tacano, Y Yamamoto, and M. Nakao

Subjects
Coupling, Physics, Admittance, Condensed matter physics, Field (physics), Numerical analysis, Transistor, Spectral density, 020206 networking & telecommunications, 02 engineering and technology, Mechanics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 7. Clean energy, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], law, 0202 electrical engineering, electronic engineering, information engineering, 020201 artificial intelligence & image processing, Field-effect transistor, Poisson's equation, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

We present a modified hydrodynamic approach to simulate high frequency noise in field‐effect transistors. The model is based on the coupling of standard 1D hydrodynamic equations for carrier concentration, velocity and energy with a modified pseudo‐2D Poisson equation. The advantage of this approach lies in the possibility to take into account the effect of a gate within a simple 1D approach. The model is applied to the case of GaAs FETs at room temperature and validated through the calculation of the small‐signal admittance and of the spectral density of current fluctuations in the framework of the generalized admittance field method.

Published
2007
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16. Noise analysis of plasma wave oscillations in InGaAs channels

Author

Tomas Gonzalez, Luca Reggiani, H. Marinchio, J. F. Millithaler, G. Sabatini, Christophe Palermo, Susana Perez, J. Pousset, Pavel Shiktorov, V. Gruẑinkis, Daniel Pardo, Luca Varani, Javier Mateos, E. Starikov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Departamento de Fisica Aplicada, Universidad de Salamanca, Universidad de Salamanca, Semiconductor Physics Institute (Vilnius), Semiconductor Physics Institute, Dipartimento di Ingegneria dell’Innovazione and Istituto Nazionale di Fisica della Materia, Universita` di Lecce, and M. Tacano, Y Yamamoto, and M. Nakao

Subjects
Physics, Condensed matter physics, Waves in plasmas, Thermodynamic equilibrium, Transistor, Monte Carlo method, Spectral density, 020206 networking & telecommunications, 02 engineering and technology, Plasma, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Plasma oscillation, Molecular physics, Noise (electronics), law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, law, 0202 electrical engineering, electronic engineering, information engineering, 020201 artificial intelligence & image processing, ComputingMilieux_MISCELLANEOUS
Abstract

Nanometric InGaAs‐based High Electron Mobility Transistors (HEMTs) have been shown experimentally to generate and detect THz radiation. The observed phenomena can be attributed to the presence of plasma waves inside the transistor channel. To investigate these oscillations we have performed Monte Carlo simulations of InGaAs homogeneous channels of different length and thickness. To detect the presence of plasma waves we have calculated the spectral density of voltage fluctuations under thermodynamic equilibrium at 300 K. Results confirm the presence of 3D and 2D plasma modes according to the topology of the channel.

Published
2007
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