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1. Characterization of Zn X-Ray Laser at PALS Centre, Its Applications in Dense Plasma Probing and Astrophysics

Author

P. Barroso, J. Nejdl, Ouali Acef, Norbert Champion, U. Chaulagain, M. Krus, Francisco Suzuki-Vidal, C. Constancias, Chantal Stehlé, Jean Larour, F. Delmotte, J. Prokupek, Annie Klisnick, Fabien Tissandier, R. Lefevre, Michaela Kozlova, Jan Dostál, Bedřich Rus, P. Jagourel, L. Meng, F. Reix, Czech Academy of Sciences [Prague] (CAS), Institut des Sciences Moléculaires d'Orsay (ISMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'optique appliquée (LOA), École Nationale Supérieure de Techniques Avancées (ENSTA Paris)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Etude du Rayonnement et de la Matière en Astrophysique (LERMA), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Centre National de la Recherche Scientifique (CNRS), Galaxies, Etoiles, Physique, Instrumentation (GEPI), Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique des Plasmas (LPP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-École polytechnique (X)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Fabry / Optique XUV, Laboratoire Charles Fabry (LCF), Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Imperial College London, Systèmes de Référence Temps Espace (SYRTE), Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), Czech Ministry of Education, Youth and Sports: 7E08099, 7E09092, Sebban, Gautier, Ros, Zeitoun, European Project, École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-École polytechnique (X)-Sorbonne Université (SU)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)

Subjects
010302 applied physics, Shock wave, Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Streak camera, Pulse duration, Astrophysics, Laser, 01 natural sciences, law.invention, X-ray laser, Wavelength, law, [PHYS.PHYS.PHYS-PLASM-PH]Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph], 0103 physical sciences, Spectral width, Talbot effect, Atomic physics, 010306 general physics, x-ray laser
Abstract

International audience; This report presents the results from experiments at PALS Centre using a Zn X-ray laser with the pulse length of 0.15 ns and the wavelength of 21.2 nm, working in single or double pass regime with the output energy of 0.4 mJ or 4 mJ per pulse, respectively. The current X-ray laser was experimentally examined to obtain its temporal coherence and spectral width using a path-difference interferometer. The double pass regime shows that QSS plasma based source-amplifier is promising for "short" fs soft X-ray pulses. The X-ray laser is commonly used for user's experiments. Its advantages can be shown in applications such as probing of dense plasmas (up to 2.5 x 10(24) cm(-3)) or single shot experiments (4 x 10(14) photons/pulse). The simple technique based on Talbot effect was used to obtain the gradients of electron densities of line plasmas produced under conditions corresponding to XRL's amplifiers operating in TCE and QSS regime. To investigate radiative shock wave in laboratory is challenging in aspects of the optimization of experimental parameters. Due to the high electron density (10(22) cm(-3)) produced in the gas medium propagated by the shock wave, the velocity of the shock wave, and the absorption losses on optical elements, it is necessary to use the energetic single shot probe.

Published
2012
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2. Identification, modeling and observation of disturbing effects in EUV interferometer lithography

Author

M. Besacier, C. Constancias, Ph. Michallon, M. Saib, Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Clot, Marielle, and Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, business.industry, Extreme ultraviolet lithography, law.invention, Interferometry, Optics, Resist, law, Extreme ultraviolet, Astronomical interferometer, Optoelectronics, Photolithography, business, Lithography, Fresnel diffraction
Abstract

The challenge of the Integrated Circuit size reducing leads to the development of new processes for future years. In the lithography domain, since several years, the EUV Lithography appears as a possible technique to reach the ITRS roadmap requirements. The EUV interferometry Lithography is still nowadays an efficient way to study and improve the EUV resist behaviors. Although the interferometer principle seems to be obvious, the optimization of its use is only reached regarding some huge constraints. In this work accurate numerical models and experimental studies have been developped. It shows that some undesirable effects can reduce the interference region and disturb the contrast of the resist printed lines. The EUV light is identified as the first issue. The beam divergence of EUV light affects the contrast quality of the fringes. The photometry computation, taking into account the optimum angular source light width is then detailed. The second cause is the Fresnel diffraction of light due to boundaries of the grating windows. Its superimposition with diffraction orders induces a damage of local printed interferences. This phenomenon leads to an edge disturbance of the interference fringes. The third cause addressed is the decrease of the interference area by the position of the wafer out of the focal distance. Possible shadowing effects are also shown.

Published
2010

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