1. Control of Sub-Nanosecond Precessional Magnetic Switching in STT-MRAM Cells for SRAM Applications
- Author
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Ursula Ebels, M. Marins de Castro, B. Dieny, B. Rodmacq, Stéphane Auffret, Liliana D. Buda-Prejbeanu, I. L. Prejbeanu, Ricardo C. Sousa, B. Lacoste, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
- Subjects
010302 applied physics ,Physics ,Magnetoresistive random-access memory ,02 engineering and technology ,Nanosecond ,021001 nanoscience & nanotechnology ,Magnetostatics ,01 natural sciences ,Aspect ratio (image) ,Switching time ,Stack (abstract data type) ,0103 physical sciences ,Electronic engineering ,Static random-access memory ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,0210 nano-technology ,Dram - Abstract
International audience; STT-MRAM are foreseen as the best contender forDRAM replacement. STT-MRAM could also be used for SRAMapplications if switching time below 1ns could be realized in areliable way. In this study, we demonstrate that sub-ns switchingwith final state determined by the current polarity through thestack can be achieved in STT-MRAM cells comprising two spinpolarizinglayers having orthogonal magnetic anisotropies [1],[2].We carried out a thorough experimental and modeling study ofthese ultrafast STT-MRAM. We demonstrated that a quitereliable switching can be achieved by increasing the cell aspectratio (AR) or advantageously by applying an in-plane statictransverse field on the cell. Switching in 200ps could bedemonstrated with write energy less than 100fJ.
- Published
- 2016
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