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Photoelectrochemical water splitting is a promising approach for renewable production of hydrogen from solar energy and requires interfacing advanced water-splitting catalysts with semiconductors. Understanding the mechanism of function of such electrocatalysts at the atomic scale and under realistic working conditions is a challenging, yet important, task for advancing efficient and stable function. This is particularly true for the case of oxygen evolution catalysts and, here, we study a highly active Co3O4/Co(OH)2 biphasic electrocatalyst on Si by means of operando ambient-pressure X-ray photoelectron spectroscopy performed at the solid/liquid electrified interface. Spectral simulation and multiplet fitting reveal that the catalyst undergoes chemical-structural transformations as a function of the applied anodic potential, with complete conversion of the Co(OH)2 and partial conversion of the spinel Co3O4 phases to CoO(OH) under precatalytic electrochemical conditions. Furthermore, we observe new spectral features in both Co 2p and O 1s core-level regions to emerge under oxygen evolution reaction conditions on CoO(OH). The operando photoelectron spectra support assignment of these newly observed features to highly active Co4+ centers under catalytic conditions. Comparison of these results to those from a pure phase spinel Co3O4 catalyst supports this interpretation and reveals that the presence of Co(OH)2 enhances catalytic activity by promoting transformations to CoO(OH). The direct investigation of electrified interfaces presented in this work can be extended to different materials under realistic catalytic conditions, thereby providing a powerful tool for mechanism discovery and an enabling capability for catalyst design.

Photoelectrochemical water splitting is a promising approach for renewable production of hydrogen from solar energy and requires interfacing advanced water-splitting catalysts with semiconductors. Understanding the mechanism of function of such electrocatalysts at the atomic scale and under realistic working conditions is a challenging, yet important, task for advancing efficient and stable function. This is particularly true for the case of oxygen evolution catalysts and, here, we study a highly active Co3O4/Co(OH)2 biphasic electrocatalyst on Si by means of operando ambient-pressure X-ray photoelectron spectroscopy performed at the solid/liquid electrified interface. Spectral simulation and multiplet fitting reveal that the catalyst undergoes chemical-structural transformations as a function of the applied anodic potential, with complete conversion of the Co(OH)2 and partial conversion of the spinel Co3O4 phases to CoO(OH) under precatalytic electrochemical conditions. Furthermore, we observe new spectral features in both Co 2p and O 1s core-level regions to emerge under oxygen evolution reaction conditions on CoO(OH). The operando photoelectron spectra support assignment of these newly observed features to highly active Co4+ centers under catalytic conditions. Comparison of these results to those from a pure phase spinel Co3O4 catalyst supports this interpretation and reveals that the presence of Co(OH)2 enhances catalytic activity by promoting transformations to CoO(OH). The direct investigation of electrified interfaces presented in this work can be extended to different materials under realistic catalytic conditions, thereby providing a powerful tool for mechanism discovery and an enabling capability for catalyst design.

Artificial photosystems are advanced by the development of conformal catalytic materials that promote desired chemical transformations, while also maintaining stability and minimizing parasitic light absorption for integration on surfaces of semiconductor light absorbers. Here, we demonstrate that multifunctional, nanoscale catalysts that enable high-performance photoelectrochemical energy conversion can be engineered by plasma-enhanced atomic layer deposition. The collective properties of tailored Co3O4/Co(OH)2 thin films simultaneously provide high activity for water splitting, permit efficient interfacial charge transport from semiconductor substrates, and enhance durability of chemically sensitive interfaces. These films comprise compact and continuous nanocrystalline Co3O4 spinel that is impervious to phase transformation and impermeable to ions, thereby providing effective protection of the underlying substrate. Moreover, a secondary phase of structurally disordered and chemically labile Co(OH)2 is introduced to ensure a high concentration of catalytically active sites. Application of this coating to photovoltaic p+n-Si junctions yields best reported performance characteristics for crystalline Si photoanodes.

The roles of hydrogen impurity and oxygen vacancy defects on defining the conductivity, and hence photoelectrochemical (PEC) performance characteristics, of monoclinic scheelite bismuth vanadate (BiVO4) are investigated using a combination of experiment and theory. We find that elemental hydrogen is present as an impurity in as-synthesized BiVO4 and that increasing its concentration by annealing in H2 at temperatures up to 290 °C leads to near-complete elimination of majority carrier transport limitations, a beneficial shift in the photoanodic current onset potential, and improved fill factor. Magnetic resonance measurements reveal that hydrogen can be incorporated in at least two different chemical environments, which are assigned to interstitial and substitutional sites. Incorporation of hydrogen leads to a shift of the Fermi level toward the conduction band edge, indicating that n-type character is correlated with increased hydrogen content. This finding is in agreement with theory and reveals that hydrogen acts as a donor in BiVO4. Sub-bandgap photoluminescence is observed from as-synthesized material and is consistent with deep electronic states associated with oxygen vacancies. Hydrogen treatment leads to reduced emission from these states. These findings support the conclusion that hydrogen, rather than oxygen vacancies, is dominant in determining the n-type conductivity of BiVO4. These findings have important implications for controlling the electronic properties and functional characteristics of this promising photoanode material.

Artificial photosynthesis relies on the availability of semiconductors that are chemically stable and can efficiently capture solar energy. Although metal oxide semiconductors have been investigated for their promise to resist oxidative attack, materials in this class can suffer from chemical and photochemical instability. Here we present a methodology for evaluating corrosion mechanisms and apply it to bismuth vanadate, a state-of-the-art photoanode. Analysis of changing morphology and composition under solar water splitting conditions reveals chemical instabilities that are not predicted from thermodynamic considerations of stable solid oxide phases, as represented by the Pourbaix diagram for the system. Computational modelling indicates that photoexcited charge carriers accumulated at the surface destabilize the lattice, and that self-passivation by formation of a chemically stable surface phase is kinetically hindered. Although chemical stability of metal oxides cannot be assumed, insight into corrosion mechanisms aids development of protection strategies and discovery of semiconductors with improved stability.

The electrochemical instability of semiconductors in aqueous electrolytes has impeded the development of robust sunlight-driven water-splitting systems. We review the use of protective thin films to improve the electrochemical stability of otherwise unstable semiconductor photoelectrodes (e.g., Si and GaAs). We first discuss the origins of instability and various strategies for achieving stable and functional photoelectrosynthetic interfaces. We then focus specifically on the use of thin protective films on photoanodes and photocathodes for photosynthetic reactions that include oxygen evolution, halide oxidation, and hydrogen evolution. Finally, we provide an outlook for the future development of thin-layer protection strategies to enable semiconductor-based solar-driven fuel production.

Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

In this paper, we propose that a p-type transparent conducting oxide (p-TCO) can function as a selective hole contact and corrosion protection layer on photoanodes used for light-driven water oxidation. To prove the concept, NiCo2O4 was used as the p-TCO for n-Si protection in alkaline condition, and we show that this material has the requisite electronic structure, stability, transparency, and hole conductivity to achieve sustained and efficient solar water oxidation. The photoelectrochemical performance demonstrates the attractive combination of transparency and low-resistance hole conductivity in the NiCo2O4. Long-term testing indicates multi-day stability with minimal decrease in performance or observable corrosion of the Si photoanode. This works suggests that p-TCOs are promising as corrosion protection layers for stable water oxidation photoanodes.

© 2015 American Chemical Society. The role of TiO2 thin films deposited by atomic layer deposition on p-InP photocathodes used for solar hydrogen generation was examined. It was found that, in addition to its previously reported corrosion protection role, the large valence band offset between TiO2 and InP creates an energy barrier for holes reaching the surface. Also, the conduction band of TiO2 is well-aligned with that of InP. The combination of these two effects creates an electronselective contact with low interface recombination. Under simulated solar illumination in HClO4 aqueous electrolyte, an onset potential of >800 mV vs RHE was achieved, which is the highest yet reported for an InP photocathode.