1. Single crystal growth and characterization of URu2Si2
- Author
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Haga, Yoshinori, Matsuda, Tatsuma D, Tateiwa, Naoyuki, Yamamoto, Etsuji, Ōnuki, Yoshichika, and Fisk, Zachary
- Subjects
Fermi surface ,single crystal growth ,Mathematical Sciences ,Physical Sciences ,Engineering ,Materials - Abstract
We review recent progress in single crystal growth and study of electronic properties in. Czocharalski pulling, using purified uranium metal and subsequent annealing under ultra-high vacuum, is successfully applied to this compound, and it yields the highest residual resistivity ratio. These high-quality single crystals allow us to investigate Fermi surfaces using quantum oscillation and to make detailed transport measurements at low temperature.
- Published
- 2014