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Silicon CMOS device technology is widely used in wireless designs for its low-power consumption, good high-frequency performance, and suitability for integration. Conventional RF CMOS circuits usually operate as voltage-mode configurations, [...]

Low-noise-amplifier (LNA) design requires tradeoffs, often among such goals as noise figure, gain, linearity, and stability. In addition, portable applications call for low power consumption. But through the use of [...]

The article reports that low-power ultrawideband (UWB) Complementary metal?oxide?semiconductor (CMOS) low noise amplifiers (LNA) gains fourto five gegahertz (GHz). It states that a low-noise amplifier (LNA) for low-voltage, low-power use was designed for fabrication using Taiwan Semiconductor Manufacturing's 0.18- picometer silicon CMOS technology. It further mentions that a current-reuse architecture is used to minimize power dissipation in the proposed UWB LNA design.

The article focuses on multi-split complementary split-ring resonators (MCSRRs) that are used for building several different types of bandpass filters. It is mentioned that multiple-pole, narrowband bandpass filters capable of providing reliable filtering functions in extremely small sizes could be developed using MCSRRs.

The article offers information on the quadrature voltage-controlled oscillator (QVCO) that can be fabricated with p-type metal-oxide-semiconductor (PMOS) solid-state technology to feature less noise and less power consumption. It mentions that quadrature coupling is achieved through direct coupling technique focused on reducing power consumption, phase noise, and chip size.

The article discusses the use of low-power voltage-controlled-oscillator (VCO) circuitry with high-frequency silicon CMOS semiconductor technology to provide effective signal generation for a large range of wireless applications. By incorporating capacitive feedback and forward-body-bias (FBB) techniques in a cross-coupled CMOS VCO approach, improvements in output swing and phase noise can be achieved.

The article offers information on the design of a low-voltage ultrawideband (UWB) Complementary Metal Oxide Semiconductor (CMOS) Mixer. It is noted that mixer is a crucial component that performs frequency conversion in wireless transceivers and it is beneficial for integrated-circuit (IC) applications. It is noted that the CMOS downconversion mixer maintains flat conversion gain across its full frequency range by employing bulk-injection and forward-body-bias techniques.

The article focuses on a general synthesis method of designing resistorless nth-order current-mode universal filters of radio frequency (RF) or microwave systems. They can provide different filter responses including bandpass, high pass, low pass, bandstop and all-pass without altering the topology. Based on current differencing trans conductance amplifier (CDTA), they are assembled to suit integrated-circuit (IC) processes.

The article presents information on a design for low-power integrated RF front thatuses a current-reuse low-noise amplifier (LNA) and a single-balanced mixer. The design employs a current-reuse low-noise amplifier and switch-pased single-balanced frequency mixer. It is stated that the need for low-power radio electronics continues to increase rapidly with the rapid growth of wireless technology.

The article focuses on the design of broadband frequency-upconversion mixer for 1.0-10.6 gigahertz (GHz) of wireless applications. It makes use of the cross-coupling post-distortion technique (CCPFT). The mixer consumes only five megawatts of power making it suitable for multiple-band ultrawideband (UWB) communications systems and software-defined radios (SDRs).

The article offers a description of a two-stage amplifier design for simulation of a 5.8 GHz low-noise amplifier (LNA). It explains that the amplifier employs an inductive-capacitive (LC) network and an N-type metal oxide semiconductor logic (NMOS) current mirror using an inductive series. Also presented are circuit diagrams for the novel current-model LNA, including its biasing circuitry and simulated noise figure.

The article focuses on the benefits of using the low-noise amplifier, a broadband amplifier, in the operation of the ultrawideband (UWB) communications systems. The broadband amplifier has been viewed efficient to cover the UWB frequency range form 3.1 to 10.6 Gigahertz with low noise figure. The LNA has been designed for the receiver with low DC power consumption.

The article focuses on low-noise amplifiers (LNAs). It is stated that multiple communications standards could be served by LNAs by merit of its low noise figure. It is noted that to suppress interference and maintain good receiver sensitivity, high linearity is important in an LNA. It is mentioned that semiconductor process in which all required components can be integrated is the basis of the LNA.

The article reports that a fully integrated differential low-noise amplifier (LNA) has been designed with an interstage LC parallel tank circuit with common-gate (CG) and common-source (CS) transistors. It consumes 34.3 mW from a +1-VDC supply and achieves peak gain of 23.8 dB and minimum noise figure of 3 dB with -3.8 dBm output power.