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Purpose – The purpose of this paper is to develop a spectral element modeling to predict electromechanical admittance in the surface-bonded piezoelectric wafer and beam structure considering temperature effects. Design/methodology/approach – For modeling the beam, the axial and transverse vibrations of the beam have been considered, and temperature-dependent mechanical and electromechanical properties of piezoelectric wafer active sensor and aluminum have been analyzed. The influences of temperature effects on electromechanical admittance are investigated. Findings – The results show that a frequency left shift and a decrease in amplitude of admittance in any natural frequencies with increasing temperature have been observed. The mechanism of these changes is discussed. Originality/value – The numerical results may be considered helpful for structural health monitoring using electromechanical impedance technique. [ABSTRACT FROM AUTHOR]