13 results on '"Rooyackers, R."'
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2. Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs
3. Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
4. Drive current enhancement in p-tunnel FETs by optimization of the process conditions
5. Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
6. Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
7. Multi-gate devices for the 32 nm technology node and beyond
8. Evaluation of triple-gate FinFETs with SiO 2–HfO 2–TiN gate stack under analog operation
9. Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions
10. Shift and ratio method revisited: extraction of the fin width in multi-gate devices
11. Lifetime study in advanced isolation techniques
12. The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures
13. Investigation of stress in shallow trench isolation using UV micro-Raman spectroscopy
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