1. Multi-level exposures and 3-D X-ray patterning for high-aspect ratio microstructures
- Author
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S. Stadler, Zhong Geng Ling, R. Wood, B. Dudley, and C. Khan-Malek
- Subjects
Microelectromechanical systems ,Materials science ,Fabrication ,business.industry ,Fixture ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Optics ,Resist ,Wafer ,X-ray lithography ,Electrical and Electronic Engineering ,business ,LIGA ,Lithography - Abstract
An alignment system has been developed to address the special needs for deep X-ray lithography (DXRL). The system is based on optical registration method of mask and wafer prior to insertion into the X-ray beam. A simple fixture allows for translation of the mask and rotation of the wafer. The fabrication of masks with optically transparent windows specially developed for that purpose at MCNC, a description of the fixture, and the alignment tests at CAMD will be reported. Results demonstrated +/− 5 micron alignment tolerances. The fixture also allows exposure of mask/wafer systems tilted with respect to the X-ray beam for fabrication of multi-level devices with tapered walls. First tests of dynamic X-ray exposures have been performed using rotation of a resist sample in the X-ray beam during exposure using a modified microlathe.
- Published
- 1998
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