59 results on '"Zheng, Y.D."'
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2. The formation of SiCN film on Si substrate by constant-source diffusion
3. Characteristics of deep ultraviolet AlGaN-based light emitting diodes with p-hBN layer
4. Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells
5. Characteristics of nanoporous InGaN/GaN multiple quantum wells
6. Temperature dependent growth of InGaN/GaN single quantum well
7. Prognosis Impact of Postoperative Radiation in Patients with Radical Esophagectomy and Pathologic Lymph Nodes Positive Esophageal Cancer
8. Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets
9. Ultraviolet emission efficiencies of AlxGa1−xN films pseudomorphically grown on AlyGa1−yN template (x
10. Enhancing upconversion emissions of NaTm0.02YbxY0.98−xF4 nanocrystals through increasing Yb3+ doping
11. Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phases of SrTiO3 epitaxial thin films
12. Experimental investigation on the upconversion mechanism of 754nm NIR luminescence of Ho3+/Yb3+:Y2O3, Gd2O3 under 976nm diode laserexcitation
13. The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition
14. Ferromagnetic Fe3N films grown on GaN(0002) substrates by MOCVD
15. Rashba spin splitting for the first two subbands in heterostructures
16. The LiNbO3 thin films deposited on the Al0.28Ga0.72N/GaN substrate
17. Observation of the surface circular photogalvanic effect in InN films
18. In vitro biological performance of nano-particles on the surface of hydroxyapatite coatings
19. Al incorporation, structural and optical properties of AlxGa1−xN (0.13⩽x⩽0.8) alloys grown by MOCVD
20. Rapid thermal annealing induced changes on the contact of Ni/Au to N-doped ZnO
21. High temperature dehydrogenation for realization of nitrogen-doped p-type ZnO
22. Effect of NH3 flow rate on growth, structure and luminescence of amorphous silicon nitride films by electron cyclotron resonance plasma
23. Circular photogalvanic effect at inter-band excitation in InN
24. Temperature dependence of strain in Al0.22Ga0.78N/GaN heterostructures with and without Si3N4 passivation
25. Modeling analysis of the MOCVD growth of ZnO film
26. High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD
27. The high mobility InN film grown by MOCVD with GaN buffer layer
28. The template effects on AlN/Al0.3Ga0.7N distributed Bragg reflectors grown by MOCVD
29. Study of structure and magnetic properties of Ni-doped ZnO-based DMSs
30. Structural evolution of SiNx films deposited by ECR and its light emission
31. Gallium doping dependence of single-crystal n-type Zno grown by metal organic chemical vapor deposition
32. Thermal annealing of InN films grown by metal–organic chemical vapor deposition
33. The solubility of phosphorus in GaN
34. Generation and amplification of confined acoustic phonons in a quantum wire via the Čerenkov effect
35. Preparation GaxMn1−xN DMS materials using HVPE method
36. Nonvolatile memory based on Ge/Si hetero-nanocrystals
37. Growth and photocurrent property of GaN/anodic alumina/Si
38. Subbands transport of the two-dimensional electron gas in AlxGa1−xN/GaN heterostructures
39. Study on the AlN/Si interface properties
40. Effect of surface treatments on Schottky contact on n-AlxGa1−xN/GaN heterostructures
41. Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer
42. Characterization of GaN1−xPx alloys grown by metal-organic chemical vapor deposition
43. SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates
44. GaN1−xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition
45. Research on the Mn-implanted GaN with ferromagnetism at room temperature
46. Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1−xN/GaN heterostructures
47. Investigation of the crystal tilts in laterally epitaxial overgrowth GaN films formed by hydride vapor phase epitaxy
48. High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition
49. Study of moiré fringes at the interface of GaN/α-Al2O3 (0001)
50. Preparation of large area freestanding GaN by laser lift-off technology
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