Search

Your search keyword '"Zhang, Binzhen"' showing total 38 results
Start Over "Zhang, Binzhen" Publisher elsevier bv
38 results on '"Zhang, Binzhen"'

18. 100 GHz waveguide band-pass filter employing UV-LIGA micromachining process

Author

Duan Junping, Zhang Binzhen, Wang Junlin, and Wang Xin

Subjects
Engineering, business.industry, HFSS, 020208 electrical & electronic engineering, General Engineering, 020206 networking & telecommunications, 02 engineering and technology, Waveguide (optics), Surface micromachining, Resonator, Optics, Band-pass filter, Filter (video), 0202 electrical engineering, electronic engineering, information engineering, Return loss, Electronic engineering, Center frequency, business
Abstract

In this paper, a 100 GHz rectangular waveguide band-pass filter with two transmission zeros symmetrically located at both ends of pass-band is presented. The four-pole filter with two transmission zeros is composed of two dual-mode resonators with unequal width, two WR-10 standard waveguide interfaces, and three groups of round corner inductive irises in series. The filter is designed and analyzed based on the Synthesis and Simplification Theory of coupling matrix, simulated by using commercial full-wave simulation software HFSS, and fabricated using UV Lithography Technology with SU-8 photo-resist. The specifications of the filter are as follows: 100 GHz center frequency with 3.7% fractional bandwidth, the transmission zeros at frequency of 97.75 GHz and 102.75 GHz respectively to improve the out of band rejection, and return loss which is better than −18 dB across the whole pass-band. Results from measurement are in good agreement with simulations considering the inaccuracy of fabrication and measurement. Therefore, the availability of design, analysis, and fabrication methods mentioned in this paper is confirmed.

Published
2017
Full Text
View/download PDF

24. Piezoresistive effect in GaAs/InxGa1−xAs/AlAs resonant tunneling diodes for application in micromechanical sensors

Author

Wang Jian, Zhang Wendong, Xiong Ji-jun, Zhang Binzhen, Xue Chenyang, and Hu Jie

Subjects
Materials science, Wheatstone bridge, Silicon, business.industry, General Engineering, Electrical engineering, chemistry.chemical_element, Biasing, Piezoresistive effect, law.invention, Surface micromachining, chemistry, law, Bridge circuit, Optoelectronics, business, Quantum tunnelling, Diode
Abstract

The current-voltage characteristics of GaAs/In"xGa"1"-"xAs/AlAs resonant tunneling diodes (RTDs) are a function of stress, and the current-voltage changes of RTDs with stress are attributed to the piezoresistive effect in RTDs. In order to study the piezoresistive effect in RTDs for application in micromachined mechanical sensors, the beam-mass structure based on RTDs is designed, fabricated and tested by the Wheatstone bridge test circuit. The test results show that the piezoresistive sensitivity of RTDs can be adjusted through the bias voltage, and the maximal piezoresistive sensitivity of RTDs with bias voltage at 0.618V is 7.61x10^-^1^1Pa^-^1, which is two orders higher than the minimal piezoresistive sensitivity (2.03x10^-^1^3Pa^-^1) of RTDs with bias voltage at 0.656V, and is also higher than the piezoresistive sensitivity of silicon material (5.52x10^-^1^1Pa^-^1).

Published
2008
Full Text
View/download PDF

35. GaAs HEMT as sensitive strain gauge

Author

Liu, Jun, primary, Hou, Tingting, additional, Xue, Chenyang, additional, Tan, Zhenxin, additional, Liu, Guowen, additional, Zhang, Binzhen, additional, and Zhang, Wendong, additional

Published
2011
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results