1. Role of tension in microstructure formation in pure metals affected by ion implantation
- Author
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A. N. Didenko, Alexander I. Ryabchikov, Ramil A. Nasyrov, Galina V. Pushkareva, Alexander E. Ligachev, Yuriy P. Sharkeev, Eduard Kozlov, and Galina I. Shakhmeister
- Subjects
Nuclear and High Energy Physics ,Crystallography ,Materials science ,Ion implantation ,Impurity ,Doping ,Analytical chemistry ,Surface layer ,Dislocation ,Microstructure ,Instrumentation ,Layer (electronics) ,Ion - Abstract
Dislocation structures in the near surface layers of α-Fe produced by repetitively pulsed intense Hf ion beams with doses of 0.23 × 1016 to 24.0 × 1016 ions cm−2 were studied by electron microscopy. Both ion implantation and plasma deposition were used. Under such conditions the maximum impurity concentration of Hf in α-Fe appeared to be 70 at.%, the dose of implanted ions being determined from profile analysis of Hf distribution by the RBS method. A developed dislocation structure is formed by ion implantation in the near surface layer of α-Fe over a depth of 100 μm. The dislocation density reaches its maximum value at a depth of 5–7 μm from the surface and is increased by about 1–2 orders of magnitude from that in the initial state. Static tensions formed in the doped layer play a decisive role in the formation of the dislocation structure.
- Published
- 1991
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