1. Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration
- Author
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V. P. Lesnikov, Ivan Antonov, Yu. A. Danilov, M. P. Temiryazeva, O. V. Vikhrova, A. A. Konakov, Yu. M. Kuznetsov, D. A. Pavlov, S. Yu. Zubkov, Yu. V. Usov, Yu. A. Dudin, Nikolai A. Sobolev, A. V. Kudrin, D. E. Nikolichev, M. V. Dorokhin, and R. N. Kriukov
- Subjects
010302 applied physics ,Materials science ,business.industry ,Analytical chemistry ,02 engineering and technology ,Magnetic semiconductor ,Conductivity ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Epitaxy ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Ion ,Semiconductor ,Ferromagnetism ,0103 physical sciences ,Charge carrier ,Irradiation ,0210 nano-technology ,business - Abstract
The influence of He+ ion irradiation on magnetotransport properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the p-type has been found. The ion fluence at which the conversion occurs depends on the Fe concentration in the InSb matrix. Magnetotransport properties of the two-phase (In,Fe)Sb layer are strongly affected by ferromagnetic Fe inclusions. An influence of the number of electrically active radiation defects on the magnetic properties of the single-phase In0.75Fe0.25Sb DMS has been found. At the same time, the results show that the magnetic properties of the In0.75Fe0.25Sb DMS are quite resistant to significant changes of the charge carrier concentration and the Fermi level position. The results confirm a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb that is fundamentally different from Mn doped III-V DMS.
- Published
- 2019
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