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This paper describes a high-performance p -type tin-oxide (SnO) thin film transistor (TFT) using fluorine plasma treatment on the SnO active channel layer. The influence of fluorine plasma treatment for this p -type SnO TFT device was also investigated. Through tuning the fluorine plasma power treated on the SnO active channel layer at low temperature, the optimal p -type SnO TFT device exhibits a very high on/off current ratio of 9.6 × 10 6 , a field-effect mobility of 2.13 cm 2 V −1 s −1 , a very low subthreshold swing of 106 mV/dec and an extremely low off-state current of 1 pA at a low driven voltage of p -type SnO channel that reduced crystallized channel roughness and passivated oxygen vacancies and interface traps. This high-performance p -type SnO TFT device using fluorine plasma treatment on the active channel shows great promise for future high-resolution and high-speed display applications.

In this works, we investigated a Ti–O material system integrating with InGaZnO thin film transistor. The Ti–O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiO x /IGZO TFT reaches a smaller sub-threshold swing ( SS ) of 125 mV/decade and a higher field effect mobility of 61 cm 2 /V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.

A low off-state current of 1.6 × 10 −14 A/μm and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c -axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 °C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga–O bonds to reduce oxygen vacancies, and the c -axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary.

This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm 2 /V s at a low drive voltage of