1. Spin relaxation induced by interfacial effects in GaN/Al0.25Ga0.75N heterostructures
- Author
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Bo Shen, Y. Zhang, Shixiong Zhang, Xingchen Liu, X H Zhang, Zhenhao Sun, Lei Fu, Fentao Wang, Weikun Ge, Teng Fan, and Ning Tang
- Subjects
Free electron model ,Condensed Matter::Materials Science ,Materials science ,Photoluminescence ,Condensed matter physics ,Spintronics ,Scattering ,Spin diffusion ,Heterojunction ,Electron ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Excitation - Abstract
Spin relaxation induced by the interfacial effects in GaN/Al0.25Ga0.75N heterostructures was carefully investigated using a photon-energy-dependent time-resolved Kerr rotation spectrum. The existence of the interfacial localized states with potential fluctuations at the GaN/AlGaN heterointerface leads to photoluminescence peaks showing blue and S-shaped shifts owing to the excitation power and temperature, respectively. Photoexcited electrons in the localized states show a spin relaxation time longer than 1 ns because of the suppression of the D'yakonov–Perel’ (DP) scattering, while the spin relaxation time of free electrons was approximately only 10 ps because of the giant Rashba spin-orbit coupling induced by the interfacial polarization field under the framework of the DP scattering mechanism. Furthermore, it is found that the high electron mobility at the heterointerface results in a long spin diffusion length of 300 nm at high temperatures, which is promising for the development of GaN-based spintronic devices.
- Published
- 2021
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