Search

Solution processing of metal oxide semiconductors (MOS) is widely used for electronic and optoelectronic applications. However, the high-temperature annealing process that is required for device-quality films is incompatible with a flexible substrate because plastics can be thermally damaged. This study fabricates a p-type Cu2O flexible photodetector (PD) with a metal-semiconductor-metal structure on a polyethylene terephthalate (PET) substrate by irradiating a preheated precursor film with ultraviolet (UV) light. High-quality Cu2O crystals are formed on PET substrates by the charge transfer transition that is excited by the UV-irradiation at room temperature. An extremely high photo-to-dark current ratio (PDCR) of 1590 is achieved for a solution-processed Cu2O flexible PD. This flexible PD exhibits a relatively fast photoresponse (~0.2 s) and folds reproducibly after repeated bending for 500 cycles. This process does not require conventional high-temperature thermal annealing and is applicable to other solution-processed MOS, particularly those that are used for flexible electronic applications.

Polycrystalline CuCl films were fabricated by chemical bath deposition (CBD) on a Cu substrate at a low solution temperature of 90 °C. Continuous CuCl films were prepared using the copper (II) chloride (CuCl2) compound as the precursor for both the Cu2 + and Cl− sources, together with repeated HCl dip treatments. An HCl dip pretreatment of the substrate favored the nucleation of CuCl crystallites. Further, interrupting the film deposition and including an HCl dip treatment of the film growth surface facilitated the deposition of a full-coverage CuCl film. A dual beam (FIB/SEM) system with energy dispersive spectrometry facilities attached revealed a homogeneous CuCl layer with a flat-top surface and an average thickness of about 1 μm. Both the excitonic and biexcitonic emission lines were well-resolved in the 6.4 K photoluminescence spectra. In particular, the free exciton emission line was observable at room temperature, indicating the good quality of the CuCl films prepared by CBD.

Surface plasmon resonance was observed to red shift in hexagonal nanohemisphere Ag array covered by double-walled carbon nanotubes. By altering the density of carbon nanotubes, the surface plasmon resonance can be tuned from 563 nm to 586 nm and the light scattering is enhanced in the spectral range from orange to red. This leads to improved performance of amorphous silicon solar cells deposited on top, which yields a short-circuit current density of 14.07 mA/cm2 and a power conversion efficiency of 6.55% under the illumination of AM 1.5G. This carbon nanotubes' density-dependent surface plasmon shift is attributed to the dielectric constant change around the periodic Ag nanostructure, which can be applied to other solar cell materials by fine-tuning the surface plasmon resonance to enhance the absorption at wavelength where the active layer is less absorptive.