23 results on '"Voelskow, M."'
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2. Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure
3. Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers
4. Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and subsequent annealing in CO atmosphere
5. Flash-lamp annealing of semiconductor materials—Applications and process models
6. Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass
7. Advanced thermal processing of semiconductor materials in the millisecond range
8. Regrowth mechanisms in flash lamp processing of heteroepitaxial SiC on silicon substrates
9. Annealing studies of Al-implanted 6H-SiC in an induction furnace
10. Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon
11. The beneficial role of flash lamp annealing on the epitaxial growth of the 3C–SiC on Si
12. Investigation of Al-implanted 6H– and 4H–SiC layers after fast heating rate annealings
13. Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields
14. The influence of the implantation sequence on the (SiC)1−x(AlN)x formation
15. Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering
16. Crystallization and surface erosion of SiC by ion irradiation at 500°C
17. A novel (SiC)1−x(AlN)x compound synthesized using ion beams
18. RBS and channeling analysis of cobalt disilicide layers produced by focused ion beam implantation
19. Radiation damage and annealing behaviour of Ge+-implanted SiC
20. Ion beam synthesis by tungsten-implantation into 6H-silicon carbide
21. MeV carbon implantation into silicon: microstructure and electrical properties
22. Epitaxial lateral overgrowth of amorphous CVD silicon films induced by ion irradiation
23. Transient enhanced diffusion and electrical activation of As in Si during rapid thermal annealing
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