1. Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers
- Author
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A. N. Danilewsky, Sakari Sintonen, J. Mäkinen, Henri Jussila, Markku Tilli, Turkka O. Tuomi, Pasi Kostamo, Aapo Lankinen, and Harri Lipsanen
- Subjects
Diffraction ,Materials science ,Silicon ,Misorientation ,ta221 ,A1. Interfaces ,Synchrotron radiation ,Silicon on insulator ,chemistry.chemical_element ,A1. X-ray topography ,02 engineering and technology ,A1. X-ray diffraction ,01 natural sciences ,Optics ,0103 physical sciences ,Lattice plane ,Materials Chemistry ,Composite material ,010302 applied physics ,business.industry ,Metals and Alloys ,Surfaces and Interfaces ,021001 nanoscience & nanotechnology ,Crystallographic defect ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,B2. Semiconducting silicon ,chemistry ,X-ray crystallography ,0210 nano-technology ,business - Abstract
Large-area back-reflection and transmission X-ray diffraction topographs of bonded silicon-on-insulator (SOI) wafers made with synchrotron radiation allowed direct and simultaneous imaging of bonding-induced strain patterns of both the 7 μm thick (011) top layers and the (001) Si substrates of the SOI structures. The bonding-induced strain pattern consists of cells having a diameter of about 40 μm. Section topographs show a lattice misorientation of the adjacent cells of about 0.001° and the maximum observed strain-induced lattice plane rotation ten times larger, i.e. about 0.01°. Topographs made after etching away the insulator layer show no indication of residual strain or defects either in the silicon-on-insulator layer or in the substrate. This is in agreement with the experimentally determined maximum bonding stress of 30 MPa, which is much smaller than the estimated stress needed to nucleate dislocations.
- Published
- 2016