Search

In this work, we have studied the oxidation process of the bismuth doped graphene in the ambient air. Complete oxidation of the bismuth clusters and that of the graphene are firmly confirmed. The influence of oxygen on the graphene is characterized by means of Hall measurement and SdH oscillation. All transport measurements demonstrate a hole-type doping behavior. Our work also demonstrates that the short-range scattering mechanism is enhanced in doped graphene due to accumulated O-species adsorbates after being exposed in the atmosphere for 40 days and is suppressed after annealing. This investigation may open a new perspective for fabricating the graphene metal oxide devices.

We observe quantized Hall plateaus and Shubnikov de Haas oscillations in 10 at% Fe-doped Bi2Se3 flakes. All the features of the quantum transport coincide while normalizing the field-angle variable magnetoresistance to the perpendicular direction. The Hall step gives a specific contribution of ~1 e2/h per quintuple layer. This reveals a two-dimensional (2D) transport of the bulk electrons in the topological insulators. The crystal is demonstrated with an obvious ferromagnetism. Further evidences including a Berry phase of zero, a weak localization and a large effective mass rule out the contribution of the topological surface states (SS), suggesting that a great care should be taken to pindown the transport of the topological SS in topological insulators.

Few-layer graphene sheets were prepared by splitting expanded graphite using high-power sonication. Atomic-level calibrated scanning transmission electron microscopy was used to obtain efficient layer statistics, enabling optimization of the experimental conditions. This resulted in a two-step splitting mechanism in which the mean number of layers was first reduced to less than 20 by heating to 1100 °C and then to a few-layer region by a 5-min 104 W L−1 – power-density sonication. Raman spectroscopic analysis confirms the above mechanism and demonstrates that the sheets are largely free of defects and functional groups.