1. Nitrogen doped ultrananocrystalline diamond conductive layer grown on InGaN-based light-emitting diodes using nanopattern enhanced nucleation
- Author
-
Kuo-Jen Chang, Chih-Yung Chiang, Jia-Ching Lin, Wen-Cheng Ke, Chia-Yu Liao, Yi-Chan Lin, and Tae Gyu Kim
- Subjects
Materials science ,Nucleation ,General Physics and Astronomy ,02 engineering and technology ,engineering.material ,Electroluminescence ,010402 general chemistry ,01 natural sciences ,law.invention ,law ,Electric field ,Thin film ,business.industry ,Quantum-confined Stark effect ,Diamond ,Surfaces and Interfaces ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,0104 chemical sciences ,Surfaces, Coatings and Films ,engineering ,Optoelectronics ,0210 nano-technology ,business ,Layer (electronics) ,Light-emitting diode - Abstract
This study grew nitrogen doped ultrananocrystalline diamond (N-UNCD) conductive layer on InGaN-based light emitting diodes (LEDs) using the concave nanopattern (CNP) enhanced nucleation. The low nucleation density of the N-UNCD on bare LEDs (Br-LED) resulted in an island morphology. The nucleation density of the N-UNCD increased significantly from 1.8 × 108 cm−2 for Br-LED to 3.6 × 109 cm−2 for LEDs with a CNP density of 6.1 × 109 cm−2 (CNP-LED). The N-UNCD preferred to nucleate inside the CNP during the initial growth stage. The N-UNCD islands then merged and grew laterally to form a continuous thin film within a thickness of 300 nm. The N-UNCD/CNP-LED exhibited a stable electroluminescence peak wavelength of ~447.1 nm in the injection current range of 10–100 mA. The decrease in the compressive stress due to removing the p-GaN layer (i.e. the CNP structure) resulted in a quantum confined Stark effect (QCSE) mitigation in the multi-quantum wells (MQWs). In addition, the lower turn on voltage caused a lower electric field in the MQWs and diminished the screen of the QCSE. The N-UNCD prepared by the proposed nucleation technique demonstrated a promising conductive layer for InGaN-based LEDs.
- Published
- 2021
- Full Text
- View/download PDF