1. Origin of the channel width dependent field effect mobility of graphene field effect transistors
- Author
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Byoung Hun Lee, Sung Kwan Lim, Young Gon Lee, Chang Goo Kang, Doo Hua Choi, Hyun-Jong Chung, Yun Ji Kim, and Rino Choi
- Subjects
Imagination ,Materials science ,Chemical substance ,media_common.quotation_subject ,Field effect ,Nanotechnology ,02 engineering and technology ,Channel width ,01 natural sciences ,law.invention ,law ,0103 physical sciences ,Hardware_INTEGRATEDCIRCUITS ,Electrical and Electronic Engineering ,010306 general physics ,media_common ,business.industry ,Graphene ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Thermal conduction ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Optoelectronics ,0210 nano-technology ,business ,Science, technology and society ,Communication channel - Abstract
A model to explain the origin of channel width dependent field effect mobility is proposed. According to our model accounting the effect of non-uniform carrier transport in a graphene channel, the field effect mobility of wide channel graphene FET has been severely underestimated as much as two times, even without accounting the fringing field effect. Based on our model, we propose a more accurate protocol to extract the field effect mobility of graphene FET involving the use of narrow channel width devices. Display Omitted A percolative conduction model is proposed to elucidate the non-uniform transport in a graphene channel.The non-uniform transport causes an underestimation on the mobility at wide channel graphene device.A new mobility extraction method has been proposed to calibrate the error.
- Published
- 2016
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