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Jagged1 (JAG1) is a Notch ligand that contact-dependently activates Notch receptors and regulates cancer progression. The JAG1 intracellular domain (JICD1) is generated from JAG1, like formation of the NOTCH1 intracellular domain (NICD1); however, the role of JICD1 in tumorigenicity has not been comprehensively elucidated. Here we show that JICD1 induces astrocytes to acquire several cancer stem cell properties, including tumor formation, invasiveness, stemness, and resistance to anticancer therapy. The transcriptome, chromatin immunoprecipitation sequencing (ChIP-seq), and proteomics analyses show that JICD1 increases SOX2 expression by forming a transcriptional complex with DDX17, SMAD3, and TGIF2. JICD1-driven tumorigenicity is directly regulated by SOX2. Our results demonstrate that, like NICD1, JICD1 acts as a transcriptional cofactor in formation of the DDX17/SMAD3/TGIF2 transcriptional complex, leading to oncogenic transformation.

This work offers a promising approach for development of a temperature-responsive colorimetric display platform. For this purpose, uniform thermochromic microcapsules consisting of a cholesteric liquid crystal (CLC) core and a thin polyurethane shell layer were fabricated by conducting in-situ condensation polymerization at the interface of monodisperse CLC-in-water emulsion drops. Colloidal packing-driven microcapsule registry led to exact 2-dimensional positioning of CLC microcapsules into a holes-patterned flexible film stencil. Furthermore, we showed that the designated registry of different color types of CLC microcapsules on the stencil enabled development of a microwriting display technology capable of reversible text representation according to temperature change.

We developed a high performance and wide active area ultraviolet (UV) photodiode from a normal silicon (Si) photodiode (SiPD) and UV-excited nanocrystal quantum dots (QDs). A thickness-controlled QD layer of 0.3–2.7 μm thickness was formed by a simple spraying and drying process to optimize UV detection. As a result, photocurrents 2.2–5.9 times higher than those of a bare SiPD were observed under UV light of 250–400 nm wavelength. The responsivity of the QD-coated SiPD was shown to reach to greater than 300% of the bare SiPD, and 150% of a gallium phosphide (GaP) UV PD. The effects of the thickness of the QD layer and the wavelength of incident light on UV detection were investigated according to the surface morphology analysis, and optical and photoluminescence characteristics of the deposited QD layers. We believe that the proposed technology opens the way to manufacturing cost-effective and high performance UV PDs that can be applied to UV-based chemical and biological sensing.

The luminescent down-shifting (LDS) layer, which transforms incoming high energy solar photons to visible ones, promises augmentation of both photoelectric performance and aesthetic appeals of photovoltaic (PV) modules. For efficient, colored PVs with LDS layer, luminophores with high photoluminescence quantum yield (PL QY), small overlap between absorption and emission spectra, and proven photostability are prerequisites. Here, we demonstrate colorful, opaque PV modules with LDS layers of minimized photon sacrifice enabled by structurally-engineered, eco-friendly InP/ZnSexS1-x quantum dots (QDs). Specifically, composition-controlled, thick shells allow enhanced absorption in the UV region and improved PL QY of QDs. Additionally, the ligand-engineering guarantees the stability of LDS layers after the damp heat test. Benefited from QD-LDS layers, commercially available CIGS and c-Si PV modules are awarded with 40% EQE enhancement in the ultraviolet region and wide-ranging color tunability over the entire visible region by QD-LDS layers. Hence, this integrated approach for desirable luminophores will contribute to the realization of highly-efficient, aesthetically-appealing opaque PV modules.

Using a combination of quantum dots (QDs) of different sizes, and thus different bandgaps, to extend the light-harvesting spectrum of a photovoltaic device in tandem architecture is a promising strategy for increasing the solar cell efficiency. In this study, we propose a new architecture for a solar cell device consisting of a graded-bandgap active layer made of lead sulfide QDs of different sizes and based on the structure of the Schottky junction. Colloidal PbS QDs with bandgaps of 1.55, 1.44, and 1.36 eV were synthesized and used to construct a series of Schottky junction solar cells. Cells with a graded-bandgap active layer exhibited an increase in short-circuit current density (Jsc) but yielded lower open-circuit voltage (Voc) compared with cells having a uniform bandgap. We found that adding a thin electron energy-boosting layer (EEB) made from 1.55-eV-bandgap QDs can partially compensate for the thermalization loss, and thus enhance Jsc and recover Voc. Consequently, this study provides a conceptual basis for further improvement in colloidal QD-based solar cells.

Near-infrared (NIR)-sensitive hybrid bulk heterojunction solar cells were developed using NIR-absorbing HgTe quantum dots (QDs) and a low-bandgap polymer, poly[2,6-(4,4′-bis-(2-ethylhexyl)dithieno[3,2-b:2′,3′-d]silole)-alt-4,7(2,1,3-benzothiadiazole)] (PSBTBT). Hybrid composites of HgTe QDs and PSBTBT facilitate broad-range exploitation of the solar spectrum and efficient carrier dissociation prior to recombination. Nanostructures were formed on the surface of the hybrid composite via a nanoimprinting process using an anodic aluminum oxide (AAO) mold. This contributes to optical light scattering for efficient utilization of light up to the NIR region and enlarged photoactive layer–electrode interfacial areas for improving charge extraction, increasing the overall efficiency from 1.09 to 1.41%.

Here we report on heterojunction PbS quantum dot (QD) solar cells using RF magnetron sputtered CdS as the n-type window layer. These solar cells generate large open circuit voltage compared to previously reported PbS-QD solar cells. Our investigations of this device design show an optimized CdS film thickness of 70 nm and an optimized PbS QD diameter of ∼2.7 nm, corresponding to a bandgap energy of ∼1.57 eV. Under simulated AM1.5 G illumination, we attain short circuit current as high as 12 mA-cm � 2