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Monolayer and few layer antimony allotropes fabricated on oxide layers are essential for practical applications in fields of solar cells, electronic and photonic devices. Here the antimony structural phases are systemically studied on corrugated copper oxide of Cu(111) by atomically-resolved scanning tunneling microscopy (STM). We find that initial deposition of Sb atoms causes the structural changes of the underlying oxide layer and sequentially gives rise to the formation of flat (√7 × √7)-Sb and buckled antimonene phases. Finally, a nanoring-like antimony configuration is observed with triangle-shaped atomic arrays closely packing and shows high stabilities for oxygen exposure. The (√7 × √7) phase exhibits the metallic property with energetically continuous electronic states existing near Fermi level. For the antimonene and nanoring phases, band gap signatures are observed, implying the semiconducting features. Our results provide a method for fabricating stable elemental allotropes on oxide surfaces.

Significant work function changes from bare Pt(111) surface to 1 monolayer and 2 monolayers of ultrathin iron oxide (FeO) films on it are investigated by means of scanning tunneling microscopy/spectroscopy (STM/STS). With FeO layer-by-layer growth, a continuous reduction of the work function along with the surface vacuum level (VL) shifting is observed. We found that the compression of the electron spill-out at the metal-oxide interface and the substantial reconstruction of 2 ML FeO film, respectively, make major contributions to the first and the second reductions of the work function. The rectifying effect in FeO films is also observed, which is attributed to the downward shift of band alignment imposed by the total change in surface dipole. Our work shows that the polar oxide films play an important role to adjust surface electronic structures for enhancing device functionality.

Antimony nanostructures fabricated on metal oxide layers are essential for practical applications in fields of solar cells, electronic and photonic devices. Here the antimony phases were systemically studied on the copper oxide of Cu(110). By high-resolution scanning tunneling microscopy (STM), we revealed that a wrinkled antimony phase was formed on the CuO surface regardless of the initial oxide structure. It exhibited an armchair-like configuration making up of protruded and dipped Sb atoms as confirmed by STM and density functional theory calculations. Further Sb deposition caused the armchair-like phase distorting and subsequently gave rise to formation of a c(2 × 2)-Sb phase. Finally, another kind of wrinkled phase was successfully fabricated. It consisted of two zigzagged antimony chains with protruded and dipped Sb atoms alternately distributing. By analysis of the atomically-resolved STM topographies, several kinds of dislocations have been observed and the corresponding geometric models are addressed. The armchair and zigzag phases both exhibited high stabilities for oxygen exposure. Conductance measurements imply that each phase interacts with the underlying layer. Our results might provide a way for fabricating stable ultrathin materials with a well-defined edge structure on oxide surfaces.

Structure and optical properties of GaInP epilayer with the ultrathin interfacial layers grown on germanium by metal–organic vapor-phase epitaxy (MOVPE) were characterized by high resolution transmission electron microscopy (HRTEM), photoluminescence (PL), Raman as well as surface morphology measurement. A five angstroms (5 A) AlAs interfacial layer results in the decrease of PL intensity arising from the emission of [Ge (Ga,In) − V (Ga,In) ] complex. With the incorporation of AlAs interfacial layer, an increased ordered degree of GaInP epilayer is observed. On the basis of the combination of step–terrace-reconstruction (STR) mode with the dimer-induced-stress model, a CuPt-B type ordering of GaInP which is related to AlAs reconstruction with 2× periodicity process is proposed to explain this effect. Long range order occurs as a consequence of the minimization of the strain energy with increased interfacial layer thickness from 5 A to 5 nm.