1. Excitonic transitions in GaAsAlGaAs superlattices studied with lateral photoconductivity
- Author
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M. Toledo-Quinones, T. Lei, Theodore D. Moustakas, and R.J. Molnar
- Subjects
Condensed Matter::Quantum Gases ,Photocurrent ,chemistry.chemical_classification ,Condensed matter physics ,Condensed Matter::Other ,Exciton ,Superlattice ,Photoconductivity ,Binding energy ,General Chemistry ,Electronic structure ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Condensed Matter::Materials Science ,chemistry ,Materials Chemistry ,Spectroscopy ,Inorganic compound - Abstract
We studied the temperature dependence of the excitonic transitions in GaAsAlGaAs superlattices using lateral photocurrent spectroscopy. Due to the high sensitivity of the method, we determined the binding energies of the ground heavy hole and light hole excitons to be 15 ± 1 meV and 18 ± 1 meV respectively for the superlattice consisting of 300 periods of undoped GaAs (25 A thick) and Al0.3Ga0.7As (40 A thick).
- Published
- 1991
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