1. Diffusion of gallium in cadmium telluride
- Author
-
N. M. Stewart, E.D. Jones, G.W. Blackmore, and J.B. Mullin
- Subjects
Materials science ,Annealing (metallurgy) ,Mechanical Engineering ,Semiconductor materials ,Analytical chemistry ,Mineralogy ,chemistry.chemical_element ,Temperature a ,Atmospheric temperature range ,Condensed Matter Physics ,Cadmium telluride photovoltaics ,Exponential function ,chemistry ,Mechanics of Materials ,General Materials Science ,Gallium ,Single crystal - Abstract
The diffusion of Ga into bulk-grown, single crystal slices of CdTe was studied in the temperature range 350-811 o C where the diffusion anneals were carried out in sealed silica capsules using three different types of diffusion sources. These were: excess Ga used alone, or with either excess Cd or excess Te added to the Ga. Each of the three sets of conditions resulted in different types of concentration profile. At temperatures above 470 o C, a function composed of the sum of two complementary error functions gave the best fit to the profiles, whereas below this temperature a function composed of the sum of one or more exponentials of the form exp(-ax) gave the best fit.
- Published
- 1993