1. Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy
- Author
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K. Pötschke, Holger Eisele, L. Müller-Kirsch, Mario Dähne, Andrea Lenz, Dieter Bimberg, Rainer Timm, S. K. Becker, J. Grabowski, and U. W. Pohl
- Subjects
Materials science ,Nanostructure ,Condensed matter physics ,business.industry ,Band gap ,Chemical vapor deposition ,Condensed Matter Physics ,Epitaxy ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,Quantum dot ,law ,Optoelectronics ,Metalorganic vapour phase epitaxy ,Scanning tunneling microscope ,business ,Quantum well - Abstract
GaSb nanostructures in GaAs, grown by metalorganic chemical vapor deposition, were studied with cross-sectional scanning tunneling microscopy. Three different samples were examined, containing a thin quantum well, a quantum well near the critical thickness for dot formation, and finally self-organized quantum dots with base lengths of 5–8 nm and heights of about 2 nm. The dots are intermixed with a GaSb content between 60% and 100%. Also small 3D and 2D islands were observed, possibly representing quantum dots in an early growth stage and quantum dot precursors. All GaSb layers exhibit gaps, which are indications of an island-like growth mode during epitaxy.
- Published
- 2005