1. Flexoelectricity in polycrystalline TiO2 thin films
- Author
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Jürgen Schrattenholzer, Ulrich Schmid, Alexander Kromka, A. Artemenko, F.J. Maier, Klaudia Hradil, Werner Artner, and Michael Schneider
- Subjects
010302 applied physics ,Microelectromechanical systems ,Permittivity ,Nanoelectromechanical systems ,Materials science ,Polymers and Plastics ,Condensed matter physics ,Flexoelectricity ,Metals and Alloys ,02 engineering and technology ,Dielectric ,Sputter deposition ,021001 nanoscience & nanotechnology ,01 natural sciences ,Piezoelectricity ,Electronic, Optical and Magnetic Materials ,0103 physical sciences ,Ceramics and Composites ,Thin film ,0210 nano-technology - Abstract
The flexoelectric effect describes the electromechanical coupling of a strain gradient to a polarization and vice versa. This effect scales linearly with permittivity and strain gradients can get very high for dimensions on the micro and nanoscale. Even though the flexoelectric effect can be best exploited within micro or nanoelectromechanical systems (M/NEMS) applications, it has not been established in today`s M/NEMS device architectures as other transducer principles, like piezoelectricity. In this work, values of the converse flexoelectric coefficient for one of the most promising flexoelectric materials, titanium dioxide (TiO2) are provided. The experimental results are based on a carefull characterization of IrO2/TiO2/IrO2 cantilevers. Besides CMOS compatiblity TiO2 is selected as functional thin film material as it offers a very high permittivity and shows no hysteresis or saturation effects as it is neither ferro- nor paraelectric. Additionally, it guarantees a low cost, lead-free realization and can be directly integrated in a standard silicon MEMS fabrication process by sputter deposition. In order to correctly determine the flexoelectric coefficient, other electromechanical coupling effects are considered and assessed. The flexoelectric coefficient is shown to be µeff = 1.78 ± 0.16 nC m−1 at 10 kHz. The flexoelectric coupling constant with a value of 2.75 V is in good agreement with that theoretically predicted by Kogan`s estimate of 3.14 V.
- Published
- 2020