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We propose a two-step silicon carbide (SiC) solution growth method for dislocation reduction to produce the high-quality silicon carbide SiC crystals. The two-step growth consists of the growth on a Si face and a C face. Firstly, seed crystal with low threading dislocation density was prepared by the growth on a Si face utilizing the threading dislocation conversion. Secondly, the growth on the C face was conducted on the prepared seed crystal with low threading dislocation density to reduce the density of basal plane dislocations and keep smooth growth surface. We demonstrate that the two-step growth leads to the reduction of the density for all types of dislocations by two orders of magnitude compared to the initial density of the seed crystal.

The present work is concerned with the three-dimensional reconstruction of concentration field around a crystal growing from its aqueous solution using Fourier analysis based phase shift interferometric tomography. Projection data of convective field around a growing NaClO 3 crystal have been recorded using a Mach–Zehnder interferometer. A new numerical method based on the concept of real time phase shift interferometry has been employed for the analysis of the interferograms. By interpreting the interferograms as projection data, the 3-D distribution of salt concentration has been determined using principles of tomography. Study shows that the Fourier analysis-based phase shift method is a novel approach for crystal growth studies as it requires only one interferometric image for the determination of full phase information as opposed to the conventional real time phase shift interferometry wherein at least three or more phase-shifted interferograms are needed. Results have been presented in the form of interferograms, path-integrated concentration contours and three-dimensional concentration profiles over select horizontal planes above the growing crystal. Based on the reconstruction results, distribution of salt concentration in the crystal vicinity is determined and an appropriate mechanism of buoyancy-induced fluid movement in the growth chamber is discussed.