1. Electronic structure of α-sexithiophene ultrathin films grown on passivated Si(001) surfaces
- Author
-
H. Toyoshima, Shinya Ohno, K. Inoue, Masatoshi Tanaka, H. Tanaka, Jun Yoshinobu, K. Hiraga, and Kozo Mukai
- Subjects
Materials science ,Valence (chemistry) ,Stacking ,General Physics and Astronomy ,Surfaces and Interfaces ,General Chemistry ,Electronic structure ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic states ,Organic molecules ,Crystallography ,X-ray photoelectron spectroscopy ,Work function ,Ultraviolet photoelectron spectroscopy - Abstract
We have investigated the valence electronic states of α-sexithiophene (α-6T) on three passivated Si(0 0 1) surfaces, oxidized Si(0 0 1), water-adsorbed Si(0 0 1) and ethylene-adsorbed Si(0 0 1), using ultraviolet photoelectron spectroscopy (UPS). At a thickness of α-6T layer below 0.5 nm, clear features of the π states are observed for water-adsorbed Si(0 0 1) and ethylene-adsorbed Si(0 0 1), whereas broad features are observed for oxidized Si(0 0 1). This difference is attributed to the formation of well-ordered stacking on water-adsorbed Si(0 0 1) and ethylene-adsorbed Si(0 0 1).
- Published
- 2014
- Full Text
- View/download PDF