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The posterior condylar vein is an emissary vein that connects the extracranial and intracranial venous systems through the posterior condylar canal (PCC). Dural arteriovenous fistulas (DAVF) of the PCC are rare, and only seven cases have been reported. Transvenous embolization (TVE) is the first-line treatment for PCC DAVF and is predominantly performed through the internal jugular vein. Herein, we report a case of PCC DAVF treated with TVE through the deep cervical vein. This is the first case report of a PCC DAVF treated with TVE through the deep cervical vein.

This study aimed to determine the impact of the approval of prothrombin complex concentrates on the treatment of vitamin K antagonist-related intracerebral hemorrhage.We retrospectively studied all patients with vitamin K antagonist-related intracerebral hemorrhage treated with prothrombin complex concentrate at our institutes between January 2010 and June 2021. Before approval, prothrombin complex concentrate was administered as either 500 or 1000 IU at the physician's discretion (previous dose group). After approval, we adopted the manufacturer's recommended regimen (recommended dose group). The primary outcome was post-administration international normalized ratio. Secondary outcomes were the amount of prothrombin complex concentrate administered and proportion of post-administration international normalized ratio1.5, hematoma expansion, thrombotic events within 30 days, modified Rankin scale 0-3 at discharge, and in-hospital mortality.Thirty-two and 19 patients in the previous and recommended dose groups, respectively, were included. The post-administration international normalized ratio significantly differed between groups. The prothrombin complex concentrate dose and proportion of patients achieving post-administration international normalized ratio1.5 were significantly higher in the recommended dose group than in the previous dose group (1500 IU vs. 500 IU, p0.001 and 100% vs. 68%, p = 0.008). The proportions of hematoma expansion, thromboembolic events, modified Rankin scale 0-3, and mortality did not differ between groups.After prothrombin complex concentrate approval, prothrombin time-international normalized ratio correction was more effective with a significant increase in the prothrombin complex concentrates dose for vitamin K antagonist-associated intracerebral hemorrhage; however, there was no apparent difference in clinical outcomes.

Background The anterior inferior cerebellar artery–posterior inferior cerebellar artery (AICA–PICA) common trunk anomaly is reportedly one of the most common vessel variants in the posterior circulation, but reports of hemifacial spasm (HFS) associated with AICA–PICA common trunk are very rare. In the present study, we describe methods of microvascular decompression (MVD) for HFS caused by AICA–PICA common trunk compression. Methods Among 159 patients who underwent MVD for HFS, 16 patients had compression of the root exit zone by the AICA–PICA common trunk anomaly. The types of compression were classified into 2 groups: common trunk artery compression group and branching vessel compression group. Results The common trunk artery compression group consisted of 11 patients (69%), and the branching vessel compression group consisted of 5 patients (31%). The rostral branch (feeding the original AICA territory) coursed between the seventh and eighth cranial nerves in 5 patients, and in 13 patients (81%), the offending vessel harbored perforators around the root exit zone. Among 16 patients, 14 (87.5%) required interposition of the common trunk or the branching vessel, and in 2 patients, decompression was completed by the transposition method. Fifteen patients experienced sufficient results, and 1 had severe residual spasm. Transient facial palsy developed in 2 patients. No patients encountered recurrence. Conclusions Reports concerning decompression methods of AICA–PICA common trunk anomaly are very rare. The tortuosity of the common trunk and perforators from the offending vessel make the usual repositioning of the offending artery much more difficult, and adequate decompression techniques are required for successful MVD.

Background Carotid artery stenting (CAS) with distal filter protection allows continuous cerebral perfusion, although it is associated with a greater risk of cerebral ischemic complications than other protection systems. To reduce cerebral ischemic complications, CAS was performed under combined cerebral protection using both flow reversal (FR) and a distal filter. Methods Fifty-six stenoses of 52 patients were treated with CAS using the combined protection of FR and a distal filter, with intermittent occlusion of both the common carotid artery (CCA) and the external carotid artery. The blood flow was reversed into the guiding catheter to the central venous system via an external filter, which collected the debris. Clinical outcomes, the rates of capturing visible debris, and new ischemic signals on diffusion-weighted magnetic resonance imaging (DWI-MRI) were evaluated. Results The overall technical success rate was 92.9% (52/56). Successful stent deployment was achieved in 100% (56/56) of the cases. No procedural-related emboli causing a neurologic deficit were observed. In 38.5% (20/52) of the cases, visible debris were captured by only the external filter, and in 17.3% (9/52), visible debris were captured by both external and distal filters. In no case was visible debris noted in only the distal filter. New ischemic signals on DWI-MRI were detected in 9.6% (5/52). The 30-day myocardial infarction, stroke, and death rates were 0%. Conclusions The additional use of a distal filter captures emboli in 17.3% of cases, and because the occlusion is only intermittent, the procedure is potentially applicable even in those who cannot tolerate prolonged balloon occlusion of the CCA.

BF 2 + implanted strained silicon/SiGe was characterized with the aim of maximizing the performance of strained-silicon pMOSFETs. Recovery of implantation damage in the strained-silicon layer was achieved by annealing at 900 °C or higher, but end-of-range defects remained in the SiGe layer after annealing. Germanium recoil and vacancy-enhanced redistribution of germanium caused by BF 2 + implantation are not negligible issues in strained-silicon MOSFET fabrication. Boron diffusion during annealing was retarded in SiGe compared to that in silicon, and as a result, a higher-concentration and shallower boron-doped region than that in silicon can be formed in strained silicon/SiGe. Hole mobility in boron-doped strained silicon is about 30% higher than in silicon. These results suggest that lower source and drain resistance can be achieved in the strained-silicon pMOSFET than in the silicon pMOSFET.

Background The aim of this study was to compare the efficacy of surgery for spontaneous intracerebral hemorrhage with that of medical treatment, based on data from the Japan Stroke Registry Study. Methods From 1999 to 2001, 1010 patients with spontaneous intracerebral hemorrhage were registered in the Japan Standard Stroke Registry Study from 45 stroke center hospitals in Japan. The National Institutes of Health Stroke Scale (NIHSS), Japan Stroke Scale (JSS), and modified Rankin Scale scores were used to compare severity and improvement in patients given surgical and medical treatment. Conclusions Surgically treated patients, especially those with cerebellar hemorrhage, had significantly greater improvement in NIHSS or JSS score compared with medically treated patients. Our findings indicated that the patients who underwent surgery appeared to have better outcomes. But, because the study was not randomized, this observation cannot be interpreted as indicating that surgery is advantageous.

We investigated re-crystallization, the redistribution of arsenic and germanium, and the electrical properties of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic ions. Our aim was to acquire basic information regarding the fabrication of strained-silicon MOSFETs with low-resistance source and drain regions. The strained-silicon layers were completely re-crystallized with rapid thermal annealing at 900 °C or higher. Arsenic diffusivity was identical in strained and unstrained silicon but was higher than both of these in SiGe. Germanium recoil produced by implanting arsenic in the SiGe layer was observed. The solubility limit for arsenic was 2×1020 cm−3 in both strained and unstrained silicon but was lower, 1×1020 cm−3, in Si0.7Ge0.3. Electron mobility was greater in strained silicon than in unstrained silicon by about 20–30% and lower in Si0.7Ge0.3 than in silicon by about 20–30%. A thicker layer of strained silicon is thus desirable for reducing parasitic resistance in the source and drain region.

The duration of transgene expression in the brain is known to be shortened by previous sensitization to adenovirus. In order to prolong transgene expression, adenovirus vectors expressing CTLA4-Ig (AdCTLA), which blocks the B7-CD28 co-stimulatory signals required for T-cell activation, were used. Local administration of AdCTLA into the brain suppressed both the cellular and humoral immune responses to adenovirus vectors, and prolonged the duration of transgene expression. AdCTLA may be an effective tool for repeated gene transfer.

Local strain evaluation was performed for single crystal Si pillar (SCSP) by micro Raman spectroscopy and photoluminescence (PL). SCSPs were fabricated by the mesa etching of Si-on-insulator followed by the etching of the buried oxide. The compressive strain was induced to SCSPs by SiN deposition using low-pressure chemical vapor deposition. The strain distribution was clearly observed in the plane of a certain pattern of SCSP. Strain ratio comparison was also performed for SCSPs with different shapes and sizes. Defect-related PL signals were also observed.

The local strains in Si pillars induced by SiN stressors were quantitatively investigated as a function of geometry by micro-Raman scattering spectroscopy. Raman shifts of a cantilever microstructure were twice as large as those of a bridge microstructure. This difference was due to the different dimensions of the strains, i.e., biaxial strains in the cantilever type and uniaxial strains in bridge type. The thermal stability of the SiN stressor was also investigated. The results showed induced strains were stable after post-annealing at high temperature (∼1000 °C).

Physical and electrical measurements have been made to examine fundamental properties of strained-Si/Si0.7Ge0.3/Si hetero-structures implanted with 50 keV BF 2 + ions. Although an implantation-induced amorphous layer is regrown during rapid thermal annealing, secondary defects are introduced if annealing is done above 900 °C. It is revealed that hole mobility is enhanced in strained-Si layers with hole concentrations between 5.0 × 1019 and 1.2 × 1020 cm−3. The Si/SiGe interface is broadened during implantation and the ion-mixing rate is estimated to be about 0.3 atom/ion. Suppression of the redistribution of Ge into the Si layer is a crucial issue to achieve enhanced mobility in ion-implanted, strained-Si grown on SiGe.

The effectiveness of functional magnetic resonance imaging (f-MRI)-controlled and navigator-guided brain surgery for a patient with a recurrent astrocytoma is demonstrated. Preoperative f-MRI was performed in order to identify the motor area and ensure that the tumour was in the left prefrontal area. A more aggressive operation was planned for the recurrent tumour. The f-MRI data were input to the MKM navigation system and during the operation the contours of the tumour and motor area were visualised b y the microscope of the navigation system. The tumour and surrounding gliotic brain tissue were removed completely. The diagnosis was a grade III astrocytoma. The combination of the navigation system and f-MRI was useful for preoperative design of the surgical strategy, and tumour orientation during the operation, enabling aggressive surgery to be performed without functional deficits ensuing.