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Summary Force sensors that are thin, low-cost, flexible, and compatible with commercial microelectronic chips are of great interest for use in biomedical sensing, precision surgery, and robotics. By leveraging a combination of microfluidics and capacitive sensing, we develop a thin, flexible force sensor that is conformable and robust. The sensor consists of a partially filled microfluidic channel made from a deformable material, with the channel overlaying a series of interdigitated electrodes coated with a thin, insulating polymer layer. When a force is applied to the microfluidic channel reservoir, the fluid is displaced along the channel over the electrodes, thus inducing a capacitance change proportional to the applied force. The microfluidic molds themselves are made of low-cost sacrificial materials deposited via aerosol-jet printing, which is also used to print the electrode layer. We envisage a large range of industrial and biomedical applications for this force sensor., Graphical abstract, Highlights Highly flexible, capacitive force sensors based on microfluidics Linear capacitance response to applied force Rapid prototyping of low-cost and robust force sensors via aerosol-jet printing Tunable design for various sensitivities and force measurement ranges, Jing et al. report a thin, conformable force sensor based on a combination of microfluidics and capacitive sensing. The low-cost sensor is fabricated via aerosol-jet printing and shows a highly linear response with adjustable design parameters for tunable sensitivities and force ranges.

Electrical polarization phenomena in GaN are important as they have significant impact on the operation of modern day energy efficient lighting and are fundamental to GaN-based high power and high frequency electronics. Controlling polarization is beneficial for the optimization of these applications. GaN is also piezoelectric, and therefore mechanical stress and strain are possible handles to control its polarization. Nonetheless, polar semiconductors in general, and GaN in particular, are weak piezoelectric materials when compared to ceramics, and are therefore not considered for characteristic electromechanical applications such as sensing, actuation and mechanical energy harvesting. Here, we examine the effect of nanoscale porosity on the piezoelectricity of initially conductive GaN. We find that for 40% porosity, the previously conductive GaN layer becomes depleted, and exhibits enhanced piezoelectricity as measured using piezoresponse force microscopy, as well as by using a mechanical energy harvesting setup. The effective piezoelectric charge coefficient of the porous GaN, d33,eff, is found to be about 8 pm/V which is 2-3 times larger than bulk GaN. A macroscale device comprising a porous GaN layer delivered 100 nW/cm2 across a resistive load under a 150 kPa mechanical excitation. We performed finite element simulations to analyze the evolution of the piezoelectric properties with porosity. The simulations suggest that increased mechanical compliance due to porosity gives rise to the observed enhanced piezoelectricity in GaN. Furthermore, the simulations show that for stress-based excitations, the porous GaN electromechanical figure of merit is increased by an order of magnitude and becomes comparable to that of barium titanate piezoceramics. In addition, considering the central role played by GaN in modern electronics and optoelectronics, our study validates a very promising research direction when considering stress-based electromechanical applications which combine GaN's semiconducting and piezoelectric properties.